R1LV0416C-I Series
Wide Temperature Range Version 4 M SRAM (256-kword × 16-bit)
REJ03C0105-0100Z Rev. 1.00 Aug.05.2003
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R1LV0416C-I Series
Wide Temperature Range Version 4 M SRAM (256-kword × 16-bit)
REJ03C0105-0100Z Rev. 1.00 Aug.05.2003
Description
The R1LV0416C-I is a 4-Mbit static RAM organized 256-kword × 16-bit. R1LV0416C-I Series has realized higher density, higher performance and low power consumption by employing CMOS process technology (6-
transistor memory cell). The R1LV0416C-I Series offers low power standby power dissipation; therefore, it is suitable for battery backup systems. It has packaged in 44-pin TSOP II.
Features
Single 2.5 V and 3.0 V supply: 2.2 V to 3.6 V Fast access time: 55/70 ns (max) Power dissipation: Active: 5.0 mW/MHz (typ)(VCC = 2.5 V) : 6.0 mW/MHz (typ) (VCC = 3.0 V) Standby: 1.25 µW (typ) (VCC = 2.5 V) : 1.5 µW (typ) (VCC = 3.0 V) Completely static memory. No clock or timing strobe required Equal access and cycle times Common data input and output. Three state output Battery backup operation. 2 chip selection for battery backup Temperature range: −40 to +85°C
Rev.1.00, Aug.05.2003, page 1 of 18
R1LV0416C-I Series
Ordering Information
Type No. R1LV0416CSB-5SI R1LV0416CSB-7LI Access time 55 ns 70 ns Package 400-mil 44-pin plastic TSOP II (44P3W-H)
Rev.1.00, Aug.05.2003, page 2 of 18
R1LV0416C-I Series
Pin Arrangement
44-pin TSOP A4 A3 A2 A1 A0 CS1# I/O0 I/O1 I/O2 I/O3 V CC V SS I/O4 I/O5 I/O6 I/O7 WE# A17 A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 (Top view) 44 43 42 41 40 39 38 37 36 35 34 33 32 3...