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VOL617A
Vishay Semiconductors
Optocoupler, Phototransistor Output, 4 Pin LSOP, Long Creepage Mini-Flat Package
17295-6
A1 C2
4C 3E
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DESCRIPTION
The VOL617A has a GaAs infrared emitting diode emitter, which is optically coupled to a silicon planar phototransistor detector, and is incorporated in a 4 pin LSOP wide body package.
It features a high current transfer ratio, low coupling capacitance, and high isolation voltage.
The coupling device is designed for signal transmission between two electrically separated circuits.
FEATURES • Low profile package • High collector emitter voltage, VCEO = 80 V • Isolation test voltage, 5000 VRMS • Isolation voltage VIORM = 1050 Vpeak • Low coupling capacitance • High common mode transient immunity • Material categorization:
for definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • Telecom • Industrial controls • Battery powered equipment • Office machines • Programmable controllers
AGENCY APPROVALS (All parts are certified under base model VOL617A) • UL • cUL • DIN EN 60747-5-5 (VDE 0884-5), available with option 1 • BSI • FIMKO • CQC
ORDERING INFORMATION
V
O
L
6
1
7
A
-
#
X
0
0
1
T
LSOP-4
PART NUMBER
AGENCY CERTIFIED / PACKAGE
UL, cUL, BSI, FIMKO, CQC
50 to 600
4 pin LSOP, mini-flat, long creepage
UL, cUL, BSI, FIMKO, CQC, VDE (option 1)
VOL617AT 50 to 600
40 to 80 VOL617A-1T
40 to 80
4 pin LSOP, mini-flat, long creepage
-
VOL617A1X001T
Note (1) Product is rotated 180° in tape and reel cavity
CTR BIN
PACKAGE OPTION
CTR (%) 5 mA
TAPE AND REEL
63 to 125
100 to 200
160 to 320
VOL617A-2T VOL617A-3T VOL617A-4T
63 to 125
100 to 200
160 to 320
VOL617A2X001T
VOL617A3X001T
VOL617A4X001T
10.2 mm
80 to 160 130 to 260
-
-
80 to 160
VOL617A7X001T
130 to 260
VOL617A8X001T, VOL617A8X001T3 (1)
Rev. 2.2, 10-Feb-2023
1
Document Number: 82424
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VOL617A
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
VALUE
UNIT
INPUT
Reverse voltage Power dissipation Forward surge current Forward current Junction temperature OUTPUT
VR
6
V
Pdiss
100
mW
tp < 10 μs
IFSM
1.5
A
IF
60
mA
Tj
125
°C
Collector emitter voltage Emitter collector voltage
Collector current
Power dissipation Junction temperature COUPLER
VCEO
80
V
VECO
7
V
IC
50
mA
tp/T = 0.5, tp < 10 ms
IC
100
mA
Pdiss
150
mW
Tj
125
°C
Total power dissipation Storage temperature range Ambient temperature range Soldering temperature (1)
≤ 10 s
Ptot
250
mW
Tstg
-55 to +125
°C
Tamb
-55 to +110
°C
Tsld
260
°C
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute maximum ratings for extended periods of the time can adversely affect reliability.
(1) Refer to reflow profile for soldering conditions for surface mounted devices.
Ptot - Total Power Dissipation (mW)
300 Coupled device
250
200 Phototransistor
150
100 IR diode
50
0 0 20 40 60 80 100 120
Tamb - Ambient Temperature (°C)
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
Rev. 2.2, 10-Feb-2023
2
Document Number: 82424
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VOL617A
Vishay Semiconductors
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
INPUT
Forward voltage Capacitance Reverse current OUTPUT
IF = 5 mA
VF
VR = 0 V, f = 1 MHz
CO
VR = 6 V
IR
-
1.16
1.5
V
-
45
pF
-
100
μA
Collector emitter leakage current
VCE = 10 V, IF = 0 A
ICEO
-
Collector emitter capacitance
VCE = 5 V, f = 1 MHz
CCE
-
COUPLER
10
200
nA
7
-
pF
Collector emitter saturation voltage IC = 1.0 mA, IF = 5 mA
VCEsat
-
0.25
0.4
V
Coupling capacitance
f = 1 MHz
CC
-
0.25
-
pF
Note
• Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements.
CURRENT TRANSFER RATIO (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
VOL617A
CTR
50
VOL617A-1
CTR
40
VOL617A-2.