N-Channel MOSFET
www.vishay.com
Si8424CDB
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.02...
Description
www.vishay.com
Si8424CDB
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) () MAX.
0.020 at VGS = 4.5 V
0.021 at VGS = 2.5 V
8
0.023 at VGS = 1.8 V
0.028 at VGS = 1.5 V
0.045 at VGS = 1.2 V
ID (A) a, e 10 9.7 9.3 8.4 5
Qg (TYP.) 25 nC
MICRO FOOT® 1.6 x 1.6
D
D2
842x4xCx
3 1
1 1.6 mm
4G S
Backside View
Bump Side View
1.6 mm
Marking Code: 8424C
Ordering Information: Si8424CDB-T1-E1 (Lead (Pb)-free and halogen-free)
FEATURES TrenchFET® power MOSFET Low-on resistance Ultra-small 1.6 mm x 1.6 mm maximum outline Ultra-thin 0.6 mm maximum height Material categorization: for definitions of
compliance please see www.vishay.com/doc?99912
APPLICATIONS
Mobile computing, smart phones,
D
tablet PCs
- Load switch
- Low voltage drop switch
G
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs)
TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C
Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range
TA = 25 °C TA = 25 °C TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C
Package Reflow Conditions c
VPR IR / convection
VDS VGS ID IDM IS
PD TJ, Tstg
LIMIT 8 ±5
10 a 8a 6.3 b 5.1 b 25 2.3 a 0.92 b 2.7 a 1.8 a 1.1 b 0.73 b -55 to +150 260 260
Notes
a. Surface mounted on 1" x 1" FR4 board with full copper, t = 5 ...
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