Si8802DB

www.vishay.com Si8802DB Vishay Siliconix N-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 8 RDS(on) (Ω) 0.054 at VGS = 4.5 V 0.060 at VGS = 2.5 V 0.068 at VGS = 1.8 V 0.086 at VGS = 1.5 V 0.135 at VGS = 1.2 V ID (A) a 3.5 3.3 3.1 2.3 1 Qg (TYP.) 4.3 nC MICRO FOOT® 0.8 x 0.8 S S 2 xxxxx 3 1 0.8 mm 1 4G D Backside View Bump Side View 0.8 mm Marking Code: xx = AB xxx = Date/Lot traceability code Ordering Information: Si8802DB-T2-E1 (lead (Pb)-free and halogen-free) FEATURES TrenchFET® power MOSFET Small 0.8 mm x 0.8 mm outline area Low 0.4 mm max. profile Low On-resistance Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS D Load switch with low voltage drop Load switch for 1.2 V, 1.5 V, 1.8 V power lines Smart phones, tablet PCs, portable G media players S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) TA = 25 °C TA = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current TA = 25 °C TA = 25 °C TA = 25 °C Maximum Power Dissipation TA = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) c VDS VGS ID IDM IS PD TJ, Tstg LIMIT 8 ±5 3.5 a 2.8 a 3b 2.4 b 15 0.7 a 0.4 b 0.9 a 0.6 a 0.5 b 0.3 b -55 to +150 260 UNIT V A W °C THERMAL RE...