Si1422DH

New Product Si1422DH Vishay Siliconix N-Channel 12 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) 0.026 at VGS = 4.5 V 0.030 at VGS = 2.5 V 0.036 at VGS = 1.8 V ID (A)a 4 4 4 7.5 nC Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS SOT-363 SC-70 (6-LEADS) D 1 6 D Marking Code D AO XX G 3 4 S YY Lot Traceability and Date Code Part # Code Top View Ordering Information: Si1422DH-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET G Load Switch, PA Switch and Battery Switch for Portable Devices High Frequency dc-to-dc Converters Low On-Resistance Switching D D 2 5 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TF = 25 °C Continuous Drain Current (TJ = 150 °C) TF = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TF = 25 °C TA = 25 °C TF = 25 °C Maximum Power Dissipation TF = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 12 ±8 4a 4a 4b, c 4b, c 20 2.3a 1.3b, c 2.8 1.8 1.56b, c 1.0b, c - 55 to 150 260 °C W A Unit V THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambient b, d Symbol t≤5s RthJA RthJF Typical 60 34 Maximum 80 45 Unit °C/W Steady State Maximum Junction-to-Foot (Drain) Notes: a. TF = 25 °C,...