SiR492DP

New Product SiR492DP Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) 0.0038 at VGS = 4.5 V 0.0047 at VGS = 2.5 V ID (A)e 40 40 Qg (Typ.) 41 nC FEATURES Halogen-free TrenchFET® Power MOSFET RoHS COMPLIANT Low Thermal Resistance PowerPAK® Package with Small Size and Low 1.07 mm Profile 100 % Rg Tested PowerPAK SO-8 APPLICATIONS Secondary Synchronous Rectification Point-of-Load Load Switch D 6.15 mm S 1 2 3 S S 5.15 mm G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: SiR492DP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)c, d TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 12 ±8 40e 35e 27a, b 21.6a, b 60 30 3.5a, b 36 23 4.2a, b 2.7a, b - 50 to 150 260 °C W A Unit V Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 10 s. c. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed ...