SiS452DN

New Product SiS452DN Vishay Siliconix N-Channel 12-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 12 RDS(on) (Ω) 0.00325 at VGS = 10 V 0.0048 at VGS = 4.5 V ID (A)a 35 13.5 nC 35 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Definition TrenchFET® Power MOSFET 100 % Rg Tested 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC PowerPAK® 1212-8 APPLICATIONS 3.30 mm S 1 2 3 4 D 8 7 6 5 D D D S S G 3.30 mm POL DC/DC D G Bottom View Ordering Information: SiS452DN-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current Avalanche Current Avalanche Energy TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C L = 0.1 mH Symbol VDS VGS ID IDM IAS EAS IS Limit 12 ± 20 35a 35a 27.9b, c 22.3b, c 100 30 45 35a 3.2b, c 52 33 3.8b, c 2b, c - 55 to 150 260 Unit V A mJ A TC = 25 °C Continuous Source-Drain Diode Current TA = 25 °C TC = 25 °C TC = 70 °C Maximum Power Dissipation TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e PD TJ, Tstg W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t ≤ 10 s Steady State Symbol RthJA RthJC Typical 24 1.9 Maximum 33 2.4 Unit °C/W Notes: a. Package Limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Prof...