Si7904BDN

Si7904BDN Vishay Siliconix Dual N-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.030 at VGS = 4.5 V 20 0.036 at VGS = 2.5 V 0.045 at VGS = 1.8 V ID (A)a 6 6 9 nC 6 Qg (Typ.) FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET APPLICATIONS HDD Spindle Drive PowerPAK 1212-8 3.30 mm S1 1 2 3.30 mm G1 S2 D1 D2 3 4 D1 G2 8 7 D1 D2 G1 6 5 D2 G2 Bottom View Ordering Information: Si7904BDN-T1-E3 (Lead (Pb)-free) Si7904BDN-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 N-Channel MOSFET S2 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 85 °C TA = 25 °C TA = 85 °C Symbol VDS VGS Limit 20 ±8 6a 6a 6a 5.1b, c 20 6a 2.1b, c 17.8 9.3 2.5b, c 1.3b, c - 55 to 150 260 Unit V Continuous Drain Current (TJ = 150 °C) ID A Pulsed Drain Current Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C TC = 85 °C Maximum Power Dissipation TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e IDM IS PD W TJ, Tstg °C THERMAL RESISTANCE RATINGS Symbol Typical Maximum Unit t ≤ 10 s RthJA 40 50 Maximum Junction-to-Ambientb, f °C/W 5.6 7 Maximum Junction-to-Case (Drain) Steady State RthJC Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK 1212-8 is a leadless p...