SiA448DJ

New Product SiA448DJ Vishay Siliconix N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () Max. 0.0150 at VGS = 4.5 V 20 0.0166 at VGS = 2.5 V 0.0200 at VGS = 1.8 V 0.0324 at VGS = 1.5 V ID (A) 12 12 12 12 13 nC a Qg (Typ.) TrenchFET® Power MOSFET New Thermally Enhanced PowerPAK® SC-70 Package - Small Footprint Area - Low On-Resistance 100 % Rg Tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PowerPAK SC-70-6L-Single 1 D 2 D 3 6 D 5 D S 4 S 2.05 mm G Part # code AQX XXX Lot Traceability and Date code APPLICATIONS Marking Code For Smart Phones and Mobile Computing - Load Switches - DC/DC Converters G D 2.05 mm S Ordering Information: SiA448DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C)a TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 20 ±8 12a 12a 12a, b, c 9.9b, c 30 12a 2.9b, c 19.2 12.3 3.5b, c 2.2b, c - 55 to 150 260 W A Unit V °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (...