Si8406DB

www.vishay.com Si8406DB Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () MAX. 0.033 at VGS = 4.5 V 20 0.037 at VGS = 2.5 V 0.042 at VGS = 1.8 V ID (A) 16 e 16 e 15 Qg (TYP.) 7.5 nC MICRO FOOT® 1.5 x 1 S S2 xxxxxxx D3 4 1 1 mm 1 1.5 mm Backside View 6G 5S D Bump Side View Marking Code: xxxx = 8406 xxx = Date / lot traceability code Ordering Information: Si8406DB-T2-E1 (Lead (Pb)-free and halogen-free) FEATURES TrenchFET® power MOSFET Ultra-small 1.5 mm x 1 mm maximum outline Ultra-thin 0.59 mm maximum height Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Load switch D Battery management Boost converter Available G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C) Pulsed Drain Current (t = 300 μs) TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Continuous Source-Drain Diode Current Maximum Power Dissipation Operating Junction and Storage Temperature Range TC = 25 °C TA = 25 °C TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Package Reflow Conditions c IR/Convection VDS VGS ID IDM IS PD TJ, Tstg Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 10 s. c. Refer to IPC/JEDEC® (J-STD-020), no manual or hand soldering. d. Case in defined as the top surface of the package. e. TC = 25 °C package limited. LIMIT 20 ±8 ...