Document
New Product
Si1902CDL
Vishay Siliconix
Dual N-Channel 20 V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) 20 RDS(on) (Ω) 0.235 at VGS = 4.5 V 0.306 at VGS = 2.5 V ID (A)a 1.1 1 Qg (Typ.) 0.9
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
SOT-363 SC-70 (6-LEADS)
S1 1 6 D1 Marking Code PE XX YY G1 2 5 G2
• Load Switch and DC/DC Converter for Portable Devices • High Speed Switching
D1 D2
D2
3
4
S2
Lot Traceability and Date Code Part # Code
G1
G2
Top View Ordering Information: Si1902CDL-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 300 µs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID Symbol VDS VGS Limit 20 ± 12 1.1 0.9 1b, c 0.8b, c 2 0.35 0.25b, c 0.42 0.27 0.30b, c 0.23b, c - 55 to 150 °C W A Unit V
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambient Maximum Junction-to-Foot (Drain) Notes: a. Based on TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 410 °C/W. Document Number: 67876 S11-2306-Rev. B, 21-Nov-11 www.vishay.com 1
b, d
Symbol t≤5s Steady State RthJA RthJF
Typical 290 250
Maximum 350 300
Unit °C/W
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si1902CDL
Vishay Siliconix
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off DelayTime Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time Currenta
b
Symbol VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb
Test Conditions VGS = 0 V, ID = 250 µA ID = 250 µA VDS = VGS, ID = 250 µA VDS = 0 V, VGS = ± 12 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 85 °C VDS ≥ 5 V, VGS = 4.5 V VGS = 4.5 V, ID = 1 A VGS = 2.5 V, ID = 0.3 A VDS = 10 V, ID = 1 A
Min. 20
Typ.
Max.
Unit V
25 - 2.6 0.6 1.5 ± 100 1 10 0.195 0.255 3 62 20 7 2 0.9 0.2 0.2 12 4 13 11 9 6 16 13 10 0.235 0.306
mV/°C V nA µA A Ω ms
2
VDS = 10 V, VGS = 0 V, f = 1 MHz VDS = 10 V, VGS = 10 V, ID = 1 A VDS = 10 V, VGS = 4.5 V, ID = 1 A f = 1 MHz VDD = 10 V, RL = 12.5 Ω ID ≅ 0.8 A, VGEN = 10 V, Rg = 1 Ω 2.4
pF 3 1.4
nC Ω
VDD = 10 V, RL = 12.5 Ω ID ≅ 0.8 A, VGEN = 4.5 V, Rg = 1 Ω
24 8 20 20 18 12 24 20 20 0.35 2 1.2 4 16
ns
TC = 25 °C IS = 0.8 A IF = 0.8 A, dI/dt = 100 A/µs 0.8 2 8 5 3
A V nC ns
Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
www.vishay.com 2
Document Number: 67876 S11-2306-Rev. B, 21-Nov-11
This document is subject to change without notice. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
Si1902CDL
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
2 VGS = 5 V thru 2.5 V 0.8 2 ID - Drain Current (A) ID - Drain Current (A) 0.6 1.0
VGS = 2 V 1
0.4
TC = 25 °C
1 0.2 VGS = 1.5 V 0 0 0.5 1 1.5 2 VDS - Drain-to-Source Voltage (V) 0 0 0.5 1 1.5 2 VGS - Gate-to-Source Voltage (V) TC = 125 °C TC = - 55 °C
Output Characteristics
0.40 80
Transfer Characteristics
0.34
RDS(on) - On-Resistance (Ω)
Ciss
60 C - Capacitance (pF)
0.28
VGS = 2.5 V
40
0.22
VGS = 4.5 V
20 0.16
Coss Crss
0.10 0 0.5 1 ID - Drain Current (A) 1.5 2
0 0 5 10 15 VDS - Drain-to-Sourc.