Si2374DS

Si2374DS www.vishay.com Vishay Siliconix N-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) MAX. 0.030 at VGS = 4.5 V 0.034 at VGS = 2.5 V 0.041 at VGS = 1.8 V ID (A) d 5.9 5.5 5 7.7 nC Qg (TYP.) FEATURES TrenchFET® power MOSFET 100 % Rg tested Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 SOT-23 (TO-236) D 3 APPLICATIONS Load switch Power management D G 2 S 1 G Top View S N-Channel MOSFET Marking Code: F5 Ordering Information: Si2374DS-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current (t = 100 μs) Continuous Source-Drain Diode Current TC = 25 °C TA = 25 °C TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range TJ, Tstg PD IDM IS ID SYMBOL VDS VGS LIMIT 20 ±8 5.9 4.7 4.5 a, b 3.6 a, b 25 1.4 0.8 a, b 1.7 1.1 0.96 a, b 0.62 a, b -55 to 150 °C W A UNIT V THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient a, c SYMBOL t≤5s Steady State RthJA RthJF TYPICAL 100 60 MAXIMUM 130 75 UNIT °C/W Maximum Junction-to-Foot (Drain) Notes a. Surface mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 175 °C/W. d. TC = 25 °C. S14-0768-Rev. A, 14-Apr-14 Document Number: 62947 1 For technical quest...