Si1062X

www.vishay.com Si1062X Vishay Siliconix N-Channel 20 V (D-S) MOSFET SC-89 (3 leads) D 3 Marking code: J 1 G Top View PRODUCT SUMMARY VDS (V) RDS(on) max. () at VGS = 4.5 V RDS(on) max. () at VGS = 2.5 V RDS(on) max. () at VGS = 1.8 V RDS(on) max. () at VGS = 1.5 V Qg typ. (nC) ID (A) Configuration 2 S 20 0.420 0.492 0.597 0.762 1 0.53 Single FEATURES TrenchFET® power MOSFET Gate-source ESD protected: 1000 V Material categorization:  for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS Load / power switching for portable D devices Drivers: relays, solenoids, lamps, hammers, displays, memories Battery operated systems G Power supply converter circuits S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and halogen-free SC-89 Si1062X-T1-GE3 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage VDS Gate-source voltage VGS Continuous drain current (TJ = 150 °C) a TA = 25 °C TA = 70 °C ID Pulsed drain current (t = 300 μs) IDM Continuous source-drain diode current TA = 25 °C IS Maximum power dissipation a TA = 25 °C TA = 70 °C PD Operating junction and storage temperature range TJ, Tstg LIMIT 20 ±8 0.53 a, b 0.43 a, b 2 0.18 a, b 0.22 a, b 0.14 a, b -55 to +150 UNIT V A W °C THERMAL RESISTANCE RATINGS PARAMETER Maximum junction-to-ambient b Notes a. Surface mounted on 1" x 1" FR4 board b. t = 5 s t5s Steady state SYMBOL RthJA TYP. 440 54...