Power Transistors
2SB1531
Silicon PNP epitaxial planar type Darlington
For power amplification Complementary to 2SD2340
Unit: mm
15.0±0.5 13.0±0.5 4.5±0.2
M Di ain sc te on na tin nc ue e/ d
4.0±0.1
s Features
q q q
10.5±0.5
4.0±0.1
2.0±0.1
Parameter
Symbol VCBO VCEO VEBO ICP IC
Ratings –130 –110 –5
Unit V V V A A
12.5
s Absolute Maximum Ratings
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