MBR40020CT Datasheet (data sheet) PDF





MBR40020CT Datasheet - (MBR40020CT - MBR40040CTR) Silicon Power Schottky Diode

MBR40020CT   MBR40020CT  

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MBR40020CT thru MBR40040CTR Silicon Powe r Schottky Diode Features • High Surg e Capability • Types from 20 V to 40 V VRRM • Not ESD Sensitive Twin Tower Package VRRM = 20 V - 40 V IF(AV) = 4 00 A Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Repetit ive peak reverse voltage RMS reverse vo ltage DC blocking voltage Operating

MBR40020CT Datasheet - (MBR40020CT - MBR40040CTR) Silicon Power Schottky Diode

MBR40020CT  
temperature Storage temperature Symbol VRRM VRMS VDC Tj Tstg Conditions MBR400 20CT(R) MBR40030CT(R) MBR40035CT(R) MBR 40040CT(R) 20 14 20 -55 to 150 -55 to 1 50 30 21 30 -55 to 150 -55 to 150 35 25 35 -55 to 150 -55 to 150 40 28 40 -55 to 150 -55 to 150 Unit V V V °C °C E lectrical characteristics, at Tj = 25 C, unless otherwise specified Paramete r Average forward current (per








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