FIR20N120TDG

IGBT Features  1200V,20A,Vce(on)(typ)=2.3V@Vge=15V  High speed switching  Higher system efficiency  Soft current turn-off waveforms  Square RBSOA using NPT technology General Description First semi NPT IGBTs offer lower losses and higher energy efficiency for application such as IH (induction heating), UPS,General inverter and other soft switching applications. FIR20N120TDG PIN Connection TO-3P/TO-247 G C E Marking Diagram YAWW FIR20N120TD Y = Year A = Assembly Location WW = Work Week FIR20N120TD= Specific Device Code Absolute Maximum Ratings Symbol Parameter VCES VGES IC ICM IF IFM tsc PD TJ TSTG Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current ( TC=25 ℃ ) Continuous Collector Current ( TC=100℃ ) Pulsed Collector Current (Note 1) Diode Continuous Forward Current ( TC=100 ℃ ) Diode Maximum Forward Current (Note 1) Short Circuit Withstand Time Maximum Power Dissipation ( TC=25 ℃ ) Maximum Power Dissipation ( TC=100℃ ) Operating Junction Temperature Range Storage Temperature Range Thermal Characteristics Symbol Parameter Rth j-c Rth j-c Rth j-a Thermal Resistance, Junction to case for IGBT Thermal Resistance, Junction to case for Diode Thermal Resistance, Junction to Ambient @ 2010 Copyright By American First Semiconductor Value 1200 + 30 40 20 80 15 80 10 192 76 -55 to +150 -55 to +150 Max. 0.45 0.85 40 Units V V A A A A A us W W ℃ ℃ Units ℃/ W ℃/ W ℃/ W Page 1/8 FIR20N120TDG Electrical Characteristics (TC=25℃ unless otherwise...