FIGB25N120TDG

IGBT General Description Using First proprietary Trench design and advanced NPT technologv, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and sweasy parallel operation. Features ƽ NPT Trench Technology, Positive temperature coefficient ƽ Low saturation voltage: VCE(sat), typ = 2.0V @ I C = 25A and TC = 25 C ƽ Extremely enhanced avalanche capability Application ƽ Power switch circuit of induction cooker(IH). FIGB25N120TDG PIN Connection TO-3P/TO-247AD G CE VCES IC Ptot TC=25℃ VCE(SAT) 1200 V 25 A 320 W 2.0 V Marking Diagram YAWW FIGB 25N120TD Y = Year A = Assembly Location WW = Work Week FIGB25N120TD = Specific Device Code Absolute Maximum Ratings (TA=25℃ unless otherwise specified) Symbol VCES VGES IC ICMa1 IF IFM PD TJ，Tstg TL Parameter Collector-Emitter Voltage Gate- Emitter Voltage Collector Current Collector Current @TC = 100 °C Pulsed Collector Current Diode Continuous Forward Current @TC = 100 °C Diode Maximum Forward Current Power Dissipation @ TC = 25°C Power Dissipation @TC = 100 °C Operating Junction and Storage Temperature Range Maximum Temperature for Soldering Rating 1200 ±20 50 25 75 25 150 320 130 -55 to +150 300 @ 2010 Copyright By American First Semiconductor Units V V A A A A A W W ℃ ℃ Page 1/4 FIGB25N120TDG Thermal Characteristics Symbol Parameter RθJC Thermal Resistance, Junction to case for IGBT RθJC RθJA Thermal Resistance, Junction to case for Diode Thermal Resistance, Junction t...