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FM201G Dataheets PDF



Part Number FM201G
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description (FM201G - FM207G) 2.0A Surface Mount General Purpose Rectifiers
Datasheet FM201G DatasheetFM201G Datasheet (PDF)

Chip Silicon Rectifiers FM201G THRU FM207G 2.0A Surface Mount General Purpose Rectifiers - 50V-1000V Features • Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • High surge capability. • Glass passivated chip junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free parts.

  FM201G   FM201G


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Chip Silicon Rectifiers FM201G THRU FM207G 2.0A Surface Mount General Purpose Rectifiers - 50V-1000V Features • Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • High surge capability. • Glass passivated chip junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free parts, ex. FM201G-H. Mechanical data • Epoxy: UL94-V0 rated flame retardant • Case : Molded plastic, DO-214AC / SMA • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight :Approximated 0.05 gram Package outline SMA 0.196(4.9) 0.180(4.5) 0.012(0.3) Typ. 0.106(2.7) 0.091(2.3) 0.032(0.8) Typ. 0.068(1.7) 0.060(1.5) 0.032 (0.8) Typ. Dimensions in inches and (millimeters) Maximum ratings(AT T =25oC unless otherwise noted) PARAMETER Forward rectified current See Fig.2 CONDITIONS Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 2.0 A IFSM 50 A 5.0 IR μA 125 RθJA 53 OC/W CJ 30 pF TSTG -65 +175 OC SYMBOLS FM201G FM202G FM203G FM204G FM205G FM206G FM207G V * RRM 1 (V) 50 100 200 400 600 800 1000 V RM * S 2 (V) 35 70 140 280 420 560 700 V * R 3 (V) 50 100 200 400 600 800 1000 V * F 4 (V) 1.10 Operating temperature TJ, (OC) -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=2.0A @ 2010 Copyright By American First Semiconductor Page 1/2 INSTANTANEOUS FORWARD CURRENT,(A) FM201G THRU FM207G Rating and characteristic curves FIG.1-TYPICAL FORWARD CHARACTERISTICS 100 10 1 TJ=25 C Pulse Width 300us 1% Duty Cycle .1 AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 2.4 2.0 1.6 1.2 0.8 0.4 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT PEAK FORWAARD SURGE CURRENT,(A) .01 .6 .8 1.0 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE,(V) FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 50 40 30 20 10 0 1 TJ=25 C 8.3ms Single Half Sine Wave JEDEC method 10 NUMBER OF CYCLES AT 60Hz 50 100 10 1.0 .1 TJ=100 C TJ=25 C .01 0 20 40 60 80 100 120 140 PERCENTAGE RATED PEAK REVERSE VOLTAGE JUNCTION CAPACITANCE,(pF) FIG.5-TYPICAL JUNCTION CAPACITANCE 175 150 125 100 75 50 25 0 .01 .05 .1 .5 1 5 REVERSE VOLTAGE,(V) 10 50 100 REVERSE LEAKAGE CURRENT, (mA) www.First-semi.com Page 2/2 .


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