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FM301G Dataheets PDF



Part Number FM301G
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description 1.0A Surface Mount General Purpose Rectifiers
Datasheet FM301G DatasheetFM301G Datasheet (PDF)

Chip Silicon Rectifier FM301G THRU FM308G 1.0A Surface Mount General Purpose Rectifiers -50V-1300V Features • Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • High surge capability. • Glass passivated chip junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free parts, .

  FM301G   FM301G


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Chip Silicon Rectifier FM301G THRU FM308G 1.0A Surface Mount General Purpose Rectifiers -50V-1300V Features • Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • High surge capability. • Glass passivated chip junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free parts, ex. FM301G-H. Mechanical data • Epoxy: UL94-V0 rated flame retardant • Case : Molded plastic, DO-214AB / SMC • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight :Approximated 0.19 gram Package outline SMA 0.272(6.9) 0.248(6.3) 0.012(0.3) Typ. 0.189(4.8) 0.165(4.2) 0.048(1.2) Typ. 0.098(2.5) 0.075(1.9) 0.048 (1.2) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT T =25oC unless otherwise noted) PARAMETER Forward rectified current Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature See Fig.2 CONDITIONS 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol IO MIN. TYP. MAX. UNIT 3.0 A IFSM 100 A 5.0 IR µΑ 250 RθJA CJ 47 OC/W 40 pF TSTG -55 +175 OC SYMBOLS FM301G FM302G FM303G FM304G FM305G FM306G FM307G FM308G V * RRM 1 (V) 50 100 200 400 600 800 1000 1300 V RM * S 2 (V) 35 70 140 280 420 560 700 910 V * R 3 (V) 50 100 200 400 600 800 1000 1300 V * F 4 (V) Operating temperature TJ, (OC) 1.10 -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=3.0A @ 2010 Copyright By American First Semiconductor Page 1/2 INSTANTANEOUS FORWARD CURRENT,(A) FM301G THRU FM308G Rating and characteristic curves FIG.1-TYPICAL FORWARD CHARACTERISTICS 50 10 3.0 1.0 0.1 TJ=25 C Pulse Width 300us 1% Duty Cycle .01 .6 .7 .8 .9 1.0 1.1 1.2 1.3 FORWARD VOLTAGE,(V) FIG.3 - TYPICAL REVERSE CHARACTERISTICS 100 AVERAGE FORWARD CURRENT,(A) PEAK FORWARD SURGE CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 3.0 2.5 2.0 1.5 1.0 0.5 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE,( C) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 125 100 75 50 TJ=25 C 8.3ms Single Half Sine Wave JEDEC method 25 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz 10 1.0 .1 TJ=100 C TJ=25 C .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) JUNCTION CAPACITANCE,(pF) 140 120 100 80 60 40 20 0 .01 FIG.5-TYPICAL JUNCTION CAPACITANCE .05 .1 .5 1 5 10 REVERSE VOLTAGE,(V) 50 100 REVERSE LEAKAGE CURRENT, ( A)m www.First-semi.com Page 2/2 .


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