Document
Chip Silicon Rectifier
FM301G THRU FM308G
1.0A Surface Mount General Purpose Rectifiers -50V-1300V
Features
• Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to optimize board space.
• High current capability. • High surge capability. • Glass passivated chip junction. • Lead-free parts meet environmental standards of
MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free parts, ex. FM301G-H.
Mechanical data
• Epoxy: UL94-V0 rated flame retardant • Case : Molded plastic, DO-214AB / SMC • Terminals : Solder plated, solderable per MIL-STD-750,
Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight :Approximated 0.19 gram
Package outline SMA
0.272(6.9) 0.248(6.3)
0.012(0.3) Typ.
0.189(4.8) 0.165(4.2)
0.048(1.2) Typ.
0.098(2.5) 0.075(1.9)
0.048 (1.2) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25oC unless otherwise noted)
PARAMETER Forward rectified current Forward surge current
Reverse current
Thermal resistance Diode junction capacitance Storage temperature
See Fig.2
CONDITIONS
8.3ms single half sine-wave superimposed on rate load (JEDEC methode)
VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient
f=1MHz and applied 4V DC reverse voltage
Symbol IO
MIN.
TYP.
MAX. UNIT 3.0 A
IFSM 100 A
5.0
IR
µΑ 250
RθJA CJ
47 OC/W 40 pF
TSTG
-55
+175 OC
SYMBOLS
FM301G FM302G FM303G FM304G FM305G FM306G FM307G FM308G
V
*
RRM
1
(V)
50 100 200
400
600 800
1000
1300
V
RM
*
S
2
(V)
35
70 140
280
420
560
700
910
V
*
R
3
(V)
50 100 200 400
600 800
1000
1300
V
*
F
4
(V)
Operating temperature
TJ, (OC)
1.10 -55 to +150
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=3.0A
@ 2010 Copyright By American First Semiconductor
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INSTANTANEOUS FORWARD CURRENT,(A)
FM301G THRU FM308G
Rating and characteristic curves
FIG.1-TYPICAL FORWARD CHARACTERISTICS
50
10 3.0 1.0
0.1
TJ=25 C
Pulse Width 300us 1% Duty Cycle
.01 .6
.7 .8 .9 1.0 1.1 1.2 1.3
FORWARD VOLTAGE,(V)
FIG.3 - TYPICAL REVERSE
CHARACTERISTICS 100
AVERAGE FORWARD CURRENT,(A)
PEAK FORWARD SURGE CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
3.0 2.5 2.0
1.5
1.0 0.5
0 0
Single Phase Half Wave 60Hz Resistive Or Inductive Load
20 40
60 80 100 120 140 160 180 200
AMBIENT TEMPERATURE,( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
125
100 75 50
TJ=25 C
8.3ms Single Half Sine Wave JEDEC method
25
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
10 1.0
.1
TJ=100 C TJ=25 C
.01 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
JUNCTION CAPACITANCE,(pF)
140 120 100
80 60 40 20
0 .01
FIG.5-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
REVERSE LEAKAGE CURRENT, ( A)m
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