1N4004G Rectifiers Datasheet

1N4004G Datasheet, PDF, Equivalent


Part Number

1N4004G

Description

(1N4001G - 1N4007G) 1.0A Leaded Type Glass Passivated General Purpose Rectifiers

Manufacture

American First Semiconductor

Total Page 2 Pages
Datasheet
Download 1N4004G Datasheet


1N4004G
Glass Passivated Rectifier
1.0A Leaded Type Glass Passivated
General Purpose Rectifiers - 50V-1000V
Features
Axial lead type devices for through hole design.
High current capability.
High surge capability.
Glass passivated chip junction inside.
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Suffix "-H" indicates Halogen-free parts, ex. 1N4001G-H.
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, DO-41
Lead: Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity: Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 0.33 gram
1N4001G THRU 1N4007G
Package outline
DO-41
.107(2.7)
.080(2.0)
DIA.
.034(.9)
.028(.7)
DIA.
1.0(25.4)
MIN.
.205(5.2)
.166(4.2)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25oC unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
Reverse current
Thermal resistance
Diode junction capacitance
Storage temperature
See Fig.2
CONDITIONS
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 125OC
Junction to ambient, note 2
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 1.0 A
IFSM 30 A
5.0
IR
μA
50
RθJA
CJ
45 OC/W
10 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
RM
*
S
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*5
RR
(μs)
1N4001G
50
35
50
1N4002G
100
70
100
1N4003G
200
140
200
1N4004G
400
280
400
1.10 1.8
1N4005G
600
420
600
1N4006G
800
560
800
1N4007G 1000 700
1000
Notes: 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
2. Thermal resistance from junction to ambient
Operating
temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=1.0A
*5 Typical reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
Page 1/2

1N4004G
1N4001G THRU 1N4007G
Rating and characteristic curves
Fig.1 - Forward Current Derating Curve
1.2
RESISTIVE OR INDUCTIVE LOAD
1.0
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
100
0.8
0.6
0.4
0.2
0 20 40 60 80 100 120 140 160
Lead Temperature ( °C)
10
8.3mS single half sine-wave
(JEDEC Method)
11 10
Number of Cycles at 60 Hz
100
Fig. 3 - Typical Instantaneour Forward
Characteristics
100
Fig. 4 - Typical Reverse Characteristics
10
10 TJ=25°C
1.0
1.0
TJ=125°C
0.1 TJ=75°C
0.1
p u l s e w i d t h = 3 0 0μS
1% duty cycle
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Instantaneous Forward Voltage (Volts)
0.01
TJ=25°C
0.001
0 20 40 60 80 100
Percent of Rated Peak Reverse Voltage ( %)
Fig. 5 - Typical Junction Capacitance
100
10
1
0.01 0.1
1.0
10 100
Reverse Voltage (Volts)
www.First-semi.com
Page 2/2


Features Glass Passivated Rectifier 1.0A Leaded T ype Glass Passivated General Purpose Re ctifiers - 50V-1000V Features • Axial lead type devices for through hole des ign. • High current capability. • H igh surge capability. • Glass passiva ted chip junction inside. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indi cates Halogen-free parts, ex. 1N4001G-H . Mechanical data • Epoxy : UL94-V0 r ated flame retardant • Case : Molded plastic, DO-41 • Lead: Axial leads, s olderable per MIL-STD-202, Method 208 g uranteed • Polarity: Color band denot es cathode end • Mounting Position : Any • Weight : Approximated 0.33 gram 1N4001G THRU 1N4007G Package outline DO-41 .107(2.7) .080(2.0) DIA. .034(. 9) .028(.7) DIA. 1.0(25.4) MIN. .205(5 .2) .166(4.2) 1.0(25.4) MIN. Dimension s in inches and (millimeters) Maximum ratings (AT T =25oC unless otherwise no ted) PARAMETER Forward rectified curre nt Forward surge current Reverse current Thermal resistance Diode junction capacitance .
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