Recovery Rectifiers. FR605G Datasheet

FR605G Rectifiers. Datasheet pdf. Equivalent


Part FR605G
Description (FR601G - FR607G) 6.0A Leaded Type Fast Recovery Rectifiers
Feature Silicon Rectifier 6.0A Leaded Type Fast Recovery Rectifiers-50V-1000V Features • Axial lead type dev.
Manufacture American First Semiconductor
Datasheet
Download FR605G Datasheet


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FR605G
Silicon Rectifier
6.0A Leaded Type Fast Recovery
Rectifiers-50V-1000V
Features
Axial lead type devices for through hole design.
High current capability.
Fast switching for high efficiency.
High surge capability.
Open junction chip insid.
Lead-free parts meet RoHS requirments.
Suffix "-H" indicates Halogen-free parts, ex. FR601G-H.
Mechanical data
Epoxy : UL94-V0 rated flame retardant
Case : Molded plastic, P600
Lead : Axial leads, solderable per MIL-STD-202,
Method 208 guranteed
Polarity: Color band denotes cathode end
Mounting Position : Any
Weight : Approximated 2.1 gram
FR601G THRU FR607G
Package outline
P600
.360(9.10)
.340(8.60)
.052(1.32)
.048(1.22)
1.0(25.4)
MIN.
.360(9.10)
.340(8.60)
1.0(25.4)
MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT T =25oC unless otherwise noted)
PARAMETER
Forward rectified current
Forward surge current
Reverse current
Diode junction capacitance
Storage temperature
See Fig.2
CONDITIONS
8.3ms single half sine-wave superimposed on
rate load (JEDEC methode)
VR = VRRM TJ = 25OC
VR = VRRM TJ = 100OC
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT
IO 6.0 A
IFSM 300 A
5.0
IR
μA
150
CJ 100 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
RM
*
S
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
FR601G
FR602G
FR603G
FR604G
50
100
200
400
35 50
70 100
140 200
280 400
1.30
150
FR605G
600
420 600
250
FR606G
FR607G
800
1000
560
700
800
1000
500
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating
temperature
TJ, (OC)
-55 to +125
*1 Repetitive peak reverse voltage
*2 RMS voltage
*3 Continuous reverse voltage
*4 Maximum forward voltage@IF=6.0A
*5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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FR605G
FR601G THRU FR607G
Rating and characteristic curves
Fig.1 - Forward Current Derating Curve
6.0
5.0
4.0
3.0
2.0
1.0 single phase half wave 60Hz
resistive or inductive load
0
25 50
75 100 125
Lead Temperature, TL (OC)
150
Fig. 3 - Typical Instantaneour Forward
Characteristics
1000
100
Fig. 2 - Maximum Non-Repetitive Peak
Forward Surge Current
400
350
300
8(8(JJ..E3E3mmDDESESCCssiiMnMnggeelltetehhhohoadadl)l)ff ssiinnee--wwaavvee
250
200
150
100
50
0 1 10 100
Number of Cycles at 60 Hz
Fig. 4 - Typical Instantaneous Reverse
Characteristics
100
TJ=125OC
10
10
TJ=25OC
1.0
pulse width=300uS
1% duty cycle
0.1
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Instantaneous Forward Voltage, Volts
Fig. 5 - Typical Junction Capacitance
1000
1 TJ=75OC
TJ=25OC
0.1
0.01
0
20
40 60 80 100 120
Percent of Rated Peak Reverse Voltage
Fig. 6 - Test Circuit Diagram and Reverse
Recovery Time Characteristic
100
TJ=25OC
f=1.0MHz
Vsig=50mVp-p
10
1.0
10 100
Reverse Voltage, Volts
50Ω
noninductive
10Ω
noninductive
0.5A
Trr
+
25Vdc
(approx)
-
1Ω
non
inductive
-
pulse
generator
(note 2)
oscilloscope
(note 1)
+
0
-0.25A
-1.0A
0
5 10 15 20 25 30
time, t(nS)
Note: 1. rise time=7nS Max. input impedance=1MΩ, 22pF
2. rise time=10nS Max. source impedance=80Ω
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