MURA280G

Chip Silicon Rectifier MURA205G THRU MURA2100G 2.0A Surface Mount High Effciency Rectifiers - 50V-1000V Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. High current capability. Ultrafast recovery time for high efficiency. High surge current capability. Glass passivated chip junction. Lead-free parts meet RoHS requirments. Suffix "-H" indicates Halogen free parts, ex. MURA205G-H. Mechanical data Epoxy:UL94-V0 rated flame retardant Case : Molded plastic, JEDEC DO-214AC / SMA Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight :Approximated 0.05 gram Package outline SMA 0.196(4.9) 0.180(4.5) 0.012(0.3) Typ. 0.106(2.7) 0.091(2.3) 0.032(0.8) Typ. 0.068(1.7) 0.060(1.5) 0.032 (0.8) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current CONDITIONS Ambient temperature = 50OC Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 2.0 A IFSM 50 A 5.0 IR μA 150 RθJA CJ 20 OC/W 25 pF TSTG -65 ...