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MURA360G Dataheets PDF



Part Number MURA360G
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description (MURA305G - MURA3100G) 3.0A Surface Mount High Effciency Rectifiers
Datasheet MURA360G DatasheetMURA360G Datasheet (PDF)

Chip Silicon Rectifier MURA305G THRU MURA3100G 3.0A Surface Mount High Effciency Rectifiers - 50V-1000V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • Ultrafast recovery time for high efficiency. • High surge current capability. • Glass passivated chip junction. • Lead-free parts meet RoHS requirments. • Suffix "-H".

  MURA360G   MURA360G


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Chip Silicon Rectifier MURA305G THRU MURA3100G 3.0A Surface Mount High Effciency Rectifiers - 50V-1000V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • High current capability. • Ultrafast recovery time for high efficiency. • High surge current capability. • Glass passivated chip junction. • Lead-free parts meet RoHS requirments. • Suffix "-H" indicates Halogen free parts, ex. MURA305G-H. Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, JEDEC DO-214AB / SMC • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight :Approximated 0.19 gram Package outline SMC 0.272(6.9) 0.248(6.3) 0.012(0.3) Typ. 0.189(4.8) 0.165(4.2) 0.048(1.2) Typ. 0.098(2.5) 0.075(1.9) 0.048 (1.2) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current Ambient temperature = 55OC Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 3.0 A IFSM 100 A 5.0 IR μA 300 RθJA CJ 15 OC/W 70 pF TSTG -65 +175 OC SYMBOLS V * RRM 1 (V) V * RMS 2 (V) V * R 3 (V) V * F 4 (V) T * RR 5 (nS) MURA305G MURA310G MURA320G MURA330G MURA360G MURA380G MURA3100G 50 100 200 400 600 800 1000 35 70 140 280 420 560 700 50 100 200 400 600 800 1000 1.00 1.30 1.70 50 75 Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A Operating temperature TJ, (OC) -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=3.0A *5 Maximum Reverse recovery time, note 1 @ 2010 Copyright By American First Semiconductor Page 1/2 INSTANTANEOUS FORWARD CURRENT,(A) MURMAU36R0AMG3~U05MRUGAR3~A3M301UG0R0AG320G MURA305G THRU MURA3100G Rating and characteristic curves FIG.1-TYPICAL FORWARD CHARACTERISTICS 10 1.0 .1 .01 TJ=25 C Pulse Width 300us 1% Duty Cycle .001 .4 .6 .8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE (+) 25Vdc (approx.) () D.U.T. 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) () PULSE GENERATOR (NOTE 2) (+) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. +0.5A 0 -0.25A trr | | | | | | | | -1.0A 1cm SET TIME BASE FOR 50 / 10ns / cm JUNCTION CAPACITANCE,(pF) AVERAGE FORWARD CURRENT,(A) PEAK FORWAARD SURGE CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 3.6 3.0 2.4 1.8 1.2 0.6 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 20 40 60 80 100 120 140 160 180 200 AMBIENT TEMPERATURE ( C) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 100 80 60 TJ=25 C 8.3ms Single Half 40 Sine Wave JEDEC method 20 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz FIG.5-TYPICAL JUNCTION CAPACITANCE 175 150 125 100 75 50 25 0 .01 .05 .1 .5 1 5 REVERSE VOLTAGE,(V) 10 50 100 www.First-semi.com Page 2/2 .


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