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FMEG102DG

American First Semiconductor

(FMEG101DG - FMEG105DG) 1.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers

Chip Silicon Rectifier FMEG101DG THRU FMEG105DG 1.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers - 50-600...


American First Semiconductor

FMEG102DG

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Description
Chip Silicon Rectifier FMEG101DG THRU FMEG105DG 1.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers - 50-600V Features Batch process design, excellent power dissipation offers. better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Tiny plastic SMD package. High current capability. Fast switching for high efficiency. High surge current capability. Glass passivated chip junction. Lead- free parts meet RoHS requirments. Suffix "-H" indicates Halogen-free parts, ex. FMEG101DG-H. Mechanical data Epoxy: UL94-V0 rated frame retardant Case: Molded plastic, DO-214AC / SMA Terminals: Plated terminals, solderable per MIL-STD-750, Method 2026 Polarity: lndicated by cathode band Mounting Position: Any Weight: Approximated 0.05 gram Package outline SMA 0.196(4.9) 0.180(4.5) 0.012(0.3) Typ. 0.106(2.7) 0.091(2.3) 0.032(0.8) Typ. 0.068(1.7) 0.060(1.5) 0.032 (0.8) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current Ambient temperature = 55OC Forward surge current Reverse current Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 125OC f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 1.0 A IFSM 30 A 5.0 IR μA 100 CJ 15 pF TSTG -65 +175 OC SYMBOLS ...




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