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FMEG301DG

American First Semiconductor

(FMEG301DG - FMEG305DG) 3.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers

Chip Silicon Rectifier FMEG301DG THRU FMEG305DG 3.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers - 50-600...


American First Semiconductor

FMEG301DG

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Description
Chip Silicon Rectifier FMEG301DG THRU FMEG305DG 3.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers - 50-600V Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. Low profile surface mounted application in order to optimize board space. Trr less than 25ns for high efficiency. High current & surge capability. Low forward dropdown voltage. Glass passivated chip junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen free parts, ex. FMEG301DG-H. Mechanical data Epoxy:UL94-V0 rated flame retardant Case : Molded plastic, DO-214AB / SMC Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 Polarity : Indicated by cathode band Mounting Position : Any Weight :Approximated 0.19 gram Package outline SMC 0.272(6.9) 0.248(6.3) 0.012(0.3) Typ. 0.189(4.8) 0.165(4.2) 0.048(1.2) Typ. 0.098(2.5) 0.075(1.9) 0.048 (1.2) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current CONDITIONS Ambient temperature = 55OC Forward surge current Reverse current Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 125OC f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 3.0 A IFSM 100 A 5.0 IR μA 100 CJ 30 pF TSTG -65 +175 OC ...




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