Document
Chip Silicon Rectifier
FMEG301DG THRU FMEG305DG
3.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers - 50-600V
Features
• Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to optimize board space.
• Trr less than 25ns for high efficiency. • High current & surge capability. • Low forward dropdown voltage. • Glass passivated chip junction. • Lead-free parts meet environmental standards of
MIL-STD-19500 /228 • Suffix "-H" indicates Halogen free parts, ex. FMEG301DG-H.
Mechanical data
• Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, DO-214AB / SMC • Terminals : Solder plated, solderable per
MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight :Approximated 0.19 gram
Package outline SMC
0.272(6.9) 0.248(6.3)
0.012(0.3) Typ.
0.189(4.8) 0.165(4.2)
0.048(1.2) Typ.
0.098(2.5) 0.075(1.9)
0.048 (1.2) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER Forward rectified current
CONDITIONS Ambient temperature = 55OC
Forward surge current
Reverse current Diode junction capacitance Storage temperature
8.3ms single half sine-wave superimposed on rate load (JEDEC methode)
VR = VRRM TJ = 25OC VR = VRRM TJ = 125OC f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT IO 3.0 A
IFSM 100 A
5.0
IR
μA 100
CJ 30 pF
TSTG
-65
+175 OC
SYMBOLS
V
*
RRM
1
(V)
V
*
RMS
2
(V)
V
*
R
3
(V)
V
*
F
4
(V)
T
*
RR
5
(nS)
FMEG301DG 50 35 50
FMEG302DG 100 70 100 0.875
FMEG303DG 200 140 200
25
FMEG304DG 400 280 400 1.25
FMDG305DG 600 420 600 1.75
Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A
Operating temperature
TJ, (OC)
-55 to +150
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=3.0A *5 Maximum Reverse recovery time, note 1
@ 2010 Copyright By American First Semiconductor
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INSTANTANEOUS FORWARD CURRENT,(A)
FMEG301DG THRU FMEG305DG
Rating and characteristic curves
FIG.1-TYPICAL FORWARD CHARACTERISTICS
10
FMEG301DG ~ FMEG303DG
1
TJ=25°C
FMEG304DG
0.1
FMEG305DG
0.01 0.4 0.6 0.8 1.0
pulse width =300μS 1% duty cycle
1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE,(V)
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50W NONINDUCTIVE
10W NONINDUCTIVE
(+)
25Vdc (approx.)
()
D.U.T.
1W NONINDUCTIVE
OSCILLISCOPE (NOTE 1)
()
PULSE GENERATOR
(NOTE 2)
(+)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms.
+0.5A
0 -0.25A
trr
| | | | | | | |
-1.0A
1cm SET TIME BASE FOR
10 / 20ns / cm
JUNCTION CAPACITANCE,(pF)
PEAK FORWARD SURGE CURRENT,(A)
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
3.0 2.5 2.0 1.5
1.04
0.5 0 0
Single Phase Half Wave 60Hz Resistive Or Inductive Load 0.375"(9.5mm) Lead Length
25 50 75 100 125 150 AMBIENT TEMPERATURE ( C)
175
FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
100
80
60
TJ=25 C
8.3ms Single Half
40 Sine Wave
JEDEC method
20
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
FIG.5-TYPICAL JUNCTION CAPACITANCE
80
60
50 40
30
20
10
0 .01
.05 .1
.5 1
5
REVERSE VOLTAGE,(V)
10
50 100
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