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FMEG302DG Dataheets PDF



Part Number FMEG302DG
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description (FMEG301DG - FMEG305DG) 3.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers
Datasheet FMEG302DG DatasheetFMEG302DG Datasheet (PDF)

Chip Silicon Rectifier FMEG301DG THRU FMEG305DG 3.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers - 50-600V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Trr less than 25ns for high efficiency. • High current & surge capability. • Low forward dropdown voltage. • Glass passivated chip junction. • Lead-free parts meet environmental.

  FMEG302DG   FMEG302DG



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Chip Silicon Rectifier FMEG301DG THRU FMEG305DG 3.0A Glass Passivated Sufrace Mount Efficient Fast Rectifiers - 50-600V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Trr less than 25ns for high efficiency. • High current & surge capability. • Low forward dropdown voltage. • Glass passivated chip junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen free parts, ex. FMEG301DG-H. Mechanical data • Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, DO-214AB / SMC • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity : Indicated by cathode band • Mounting Position : Any • Weight :Approximated 0.19 gram Package outline SMC 0.272(6.9) 0.248(6.3) 0.012(0.3) Typ. 0.189(4.8) 0.165(4.2) 0.048(1.2) Typ. 0.098(2.5) 0.075(1.9) 0.048 (1.2) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER Forward rectified current CONDITIONS Ambient temperature = 55OC Forward surge current Reverse current Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 125OC f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 3.0 A IFSM 100 A 5.0 IR μA 100 CJ 30 pF TSTG -65 +175 OC SYMBOLS V * RRM 1 (V) V * RMS 2 (V) V * R 3 (V) V * F 4 (V) T * RR 5 (nS) FMEG301DG 50 35 50 FMEG302DG 100 70 100 0.875 FMEG303DG 200 140 200 25 FMEG304DG 400 280 400 1.25 FMDG305DG 600 420 600 1.75 Note 1. Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A Operating temperature TJ, (OC) -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=3.0A *5 Maximum Reverse recovery time, note 1 @ 2010 Copyright By American First Semiconductor Page 1/2 INSTANTANEOUS FORWARD CURRENT,(A) FMEG301DG THRU FMEG305DG Rating and characteristic curves FIG.1-TYPICAL FORWARD CHARACTERISTICS 10 FMEG301DG ~ FMEG303DG 1 TJ=25°C FMEG304DG 0.1 FMEG305DG 0.01 0.4 0.6 0.8 1.0 pulse width =300μS 1% duty cycle 1.2 1.4 1.6 1.8 2.0 FORWARD VOLTAGE,(V) FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTICS 50W NONINDUCTIVE 10W NONINDUCTIVE (+) 25Vdc (approx.) () D.U.T. 1W NONINDUCTIVE OSCILLISCOPE (NOTE 1) () PULSE GENERATOR (NOTE 2) (+) NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF. 2. Rise Time= 10ns max., Source Impedance= 50 ohms. +0.5A 0 -0.25A trr | | | | | | | | -1.0A 1cm SET TIME BASE FOR 10 / 20ns / cm JUNCTION CAPACITANCE,(pF) PEAK FORWARD SURGE CURRENT,(A) AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 3.0 2.5 2.0 1.5 1.04 0.5 0 0 Single Phase Half Wave 60Hz Resistive Or Inductive Load 0.375"(9.5mm) Lead Length 25 50 75 100 125 150 AMBIENT TEMPERATURE ( C) 175 FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 100 80 60 TJ=25 C 8.3ms Single Half 40 Sine Wave JEDEC method 20 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz FIG.5-TYPICAL JUNCTION CAPACITANCE 80 60 50 40 30 20 10 0 .01 .05 .1 .5 1 5 REVERSE VOLTAGE,(V) 10 50 100 www.First-semi.com Page 2/2 .


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