DatasheetsPDF.com

MBR0540G Dataheets PDF



Part Number MBR0540G
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description (MBR0520G - MBR0540G) 0.5A Surface Mount Schottky Barrier Rectifiers
Datasheet MBR0540G DatasheetMBR0540G Datasheet (PDF)

Low VF Chip Schottky Barrier Rectifier MBR0520G THRU MBR0504G 0.5A Surface Mount Schottky Barrier Rectifiers - 20V- 40V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection.

  MBR0540G   MBR0540G


Document
Low VF Chip Schottky Barrier Rectifier MBR0520G THRU MBR0504G 0.5A Surface Mount Schottky Barrier Rectifiers - 20V- 40V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Tiny plastic SMD package. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500/228 • Suffix "-H" indicates Halogen free parts, ex. MBR0520G-H. Package outline SOD-123 0.146(3.7) 0.130(3.3) 0.012(0.3) Typ. 0.071(1.8) 0.056(1.4) 0.031(0.8) Typ. 0.040(1.0) 0.024(0.6) 0.031(0.8) Typ. Mechanical data • Epoxy: UL94-V0 rated frame retardant • Case: Molded plastic, SOD-123 • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: lndicated by cathode band • Mounting Position: Any • Weight: Approximated 0.011 gram Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current See Fig.2 Forward surge current 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) Reverse current Thermal resistance Diode junction capacitance Storage temperature VR = VRRM TJ = 25OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol IO IFSM MIN. TYP. MAX. UNIT 0.5 A 15 A IR RθJA CJ TSTG 1.0 mA 42 OC/W 130 pF -65 +175 OC SYMBOLS MBR0520G MBR0530G MBR0540G V * RRM 1 (V) 20 30 40 V * RMS 2 (V) 14 21 28 V * R 3 (V) 20 30 40 V * F 4 (V) 0.38 0.40 0.40 Operating temperature TJ, (OC) -55 to +100 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=0.5A @ 2010 Copyright By American First Semiconductor Page 1/2 INSTANTANEOUS FORWARD CURRENT,(A) MBR0530G/MMBBRR00552400GG MBR0520G THRU MBR0504G Rating and characteristic curves FIG.1-TYPICAL FORWARD CHARACTERISTICS 50 10 3.0 1.0 0.1 TJ=25 C Pulse Width 300us 1% Duty Cycle .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) 1000 FIG.3 - TYPICAL REVERSE CHARACTERISTICS PEAK FORWARD SURGE CURRENT,(A) AVERAGE FORWARD CURRENT,(A) FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE 0.6 0.5 0.4 0.3 Single Phase Half Wave 60Hz Resistive Or Inductive Load 0.2 0.1 0 0 20 40 60 80 100 120 140 160 180 200 LEAD TEMPERATURE ( C) FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 15 12 9 TJ=25 C 8.3ms Single Half 6 Sine Wave JEDEC method 3 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz 100 10 TJ=75 C 1 TJ=25 C .1 0 20 40 60 80 100 120 140 PERCENTAGE RATED PEAK REVERSE VOLTAGE JUNCTION CAPACITANCE,(pF) 350 300 250 200 150 100 50 0 .01 FIG.5-TYPICAL JUNCTION CAPACITANCE .05 .1 .5 1 5 10 REVERSE VOLTAGE,(V) 50 100 REVERSE LEAKAGE CURRENT, (mA) www.First-semi.com Page 2/2 .


MBR0530G MBR0540G MBRS120G


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)