Document
Low VF Chip Schottky Barrier Rectifier
MBR0520G THRU MBR0504G
0.5A Surface Mount Schottky Barrier Rectifiers - 20V- 40V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Tiny plastic SMD package. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of
MIL-STD-19500/228
• Suffix "-H" indicates Halogen free parts, ex. MBR0520G-H.
Package outline SOD-123
0.146(3.7) 0.130(3.3)
0.012(0.3) Typ.
0.071(1.8) 0.056(1.4)
0.031(0.8) Typ.
0.040(1.0) 0.024(0.6)
0.031(0.8) Typ.
Mechanical data
• Epoxy: UL94-V0 rated frame retardant • Case: Molded plastic, SOD-123 • Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Polarity: lndicated by cathode band • Mounting Position: Any • Weight: Approximated 0.011 gram
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
8.3ms single half sine-wave superimposed on rate load (JEDEC methode)
Reverse current
Thermal resistance Diode junction capacitance Storage temperature
VR = VRRM TJ = 25OC
Junction to ambient f=1MHz and applied 4V DC reverse voltage
Symbol IO
IFSM
MIN.
TYP.
MAX. UNIT 0.5 A
15 A
IR
RθJA CJ
TSTG
1.0 mA
42 OC/W 130 pF -65 +175 OC
SYMBOLS
MBR0520G MBR0530G MBR0540G
V
*
RRM
1
(V)
20
30 40
V
*
RMS
2
(V)
14
21 28
V
*
R
3
(V)
20 30 40
V
*
F
4
(V)
0.38 0.40 0.40
Operating temperature
TJ, (OC)
-55 to +100
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=0.5A
@ 2010 Copyright By American First Semiconductor
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INSTANTANEOUS FORWARD CURRENT,(A)
MBR0530G/MMBBRR00552400GG
MBR0520G THRU MBR0504G
Rating and characteristic curves
FIG.1-TYPICAL FORWARD CHARACTERISTICS
50
10 3.0 1.0
0.1
TJ=25 C
Pulse Width 300us 1% Duty Cycle
.01 .1
.3 .5 .7 .9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
1000
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
PEAK FORWARD SURGE CURRENT,(A)
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
0.6
0.5
0.4 0.3 Single Phase
Half Wave 60Hz Resistive Or Inductive Load
0.2
0.1
0 0 20 40 60 80 100 120 140 160 180 200
LEAD TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
15
12
9
TJ=25 C
8.3ms Single Half
6 Sine Wave
JEDEC method
3
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
100
10
TJ=75 C
1 TJ=25 C
.1 0 20 40 60 80 100 120 140
PERCENTAGE RATED PEAK REVERSE VOLTAGE
JUNCTION CAPACITANCE,(pF)
350 300 250 200 150 100
50 0 .01
FIG.5-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
REVERSE LEAKAGE CURRENT, (mA)
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