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MBRS1150G Dataheets PDF



Part Number MBRS1150G
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description (MBRS120G - MBRS1200G) 1.0A Surface Mount Schottky Barrier Rectifiers
Datasheet MBRS1150G DatasheetMBRS1150G Datasheet (PDF)

Chip Schottky Barrier Rectifier MBRS120G THRU MBRS1200G 1.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • S.

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Chip Schottky Barrier Rectifier MBRS120G THRU MBRS1200G 1.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500 /228 • Suffix "-H" indicates Halogen-free parts, ex. MBRS120G-H. Mechanical data • Epoxy: UL94-V0 rated frame retardant • Case: Molded plastic, DO-214AC / SMA • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: lndicated by cathode band • Mounting Position: Any • Weight: Approximated 0.05 gram Package outline SMA 0.196(4.9) 0.180(4.5) 0.012(0.3) Typ. 0.106(2.7) 0.091(2.3) 0.032(0.8) Typ. 0.068(1.7) 0.060(1.5) 0.032 (0.8) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT T A=25oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current See Fig.1 Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage SYMBOL MIN. IO TYP. MAX. UNIT 1.0 A IFSM 30 A IR RθJA CJ TSTG 0.5 mA 10 88 OC/W 120 pF -65 +175 OC SYMBOLS MBRS120G MBRS130G MBRS140G MBRS150G MBRS160G MBRS180G MBRS1100G MBRS1150G MBRS1200G V * RRM 1 (V) 20 30 40 50 60 80 100 150 200 V * RMS 2 (V) 14 21 28 35 42 56 70 105 140 V * R 3 (V) 20 30 40 50 60 80 100 150 200 V * F 4 (V) 0.50 0.70 0.85 0.92 Operating temperature TJ, (OC) -55 to +125 -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=1.0A @ 2010 Copyright By American First Semiconductor Page 1/2 AVERAGE FORWARD CURRENT,(A) MBRS120G THRU MBRS1200G Rating and characteristic curves FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE MMBBRRSS15102-0M-MGG~M~MBBRRSS1210400--MMGG 1.2 1.0 0.8 0.6 0.4 0.2 0 0 20 40 60 80 100 120 140 160 180 200 LEAD TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT TJ=25 C 8.3ms Single Half Sine Wave JEDEC method INSTANTANEOUS FORWARD CURRENT,(A) MBRS150-MG~MBMRBSR1S610-20M-GMG~MBRS140-MG FIG.2-TYPICAL FORWARD CHARACTERISTICS 50 10 3.0 1.0 0.1 MBRS180-MG~MTBJR=S21520C0-MG Pulse Width 300us 1% Duty Cycle .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) PEAK FORWARD SURGE CURRENT,(A) NUMBER OF CYCLES AT 60Hz 350 300 250 200 150 100 50 0 .01 FIG.4-TYPICAL JUNCTION CAPACITANCE .05 .1 .5 1 5 10 REVERSE VOLTAGE,(V) 50 100 REVERSE LEAKAGE CURRENT, (mA) FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 10 1.0 TJ=75 C .1 TJ=25 C .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) JUNCTION CAPACITANCE,(pF) www.First-semi.com Page 2/2 .


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