Document
Chip Schottky Barrier Rectifier
MBRS220G THRU MBRS2100G
2.0A Surface Mount Schottky Barrier Rectifiers -20V-200V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of
MIL-STD-19500/228
• Suffix "-H" indicates Halogen-free parts, ex. MBRS220G-H.
Mechanical data
• Epoxy: UL94-V0 rated frame retardant • Case: Molded plastic, DO-214AC / SMA • Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Polarity: lndicated by cathode band • Mounting Position: Any • Weight: Approximated 0.05 gram
Package outline SMA
0.196(4.9) 0.180(4.5)
0.012(0.3) Typ.
0.106(2.7) 0.091(2.3)
0.032(0.8) Typ.
0.068(1.7) 0.060(1.5)
0.032 (0.8) Typ.
Dimensions in inches and (millimeters)
Maximum ratings (AT T A=25oC unless otherwise noted)
PARAMETER Forward rectified current
See Fig.1
CONDITIONS
Forward surge current
Reverse current
Thermal resistance Diode junction capacitance Storage temperature
8.3ms single half sine-wave superimposed on rate load (JEDEC methode)
VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient Junction to case
f=1MHz and applied 4V DC reverse voltage
Symbol MIN. IO
IFSM
TYP.
MAX. UNIT 2.0 A
50 A
IR
RθJA RθJC CJ TSTG
0.5 mA
10 55 OC/W 30 OC/W 160 pF -65 +175 OC
SYMBOLS
MBRS220G MBRS230G MBRS240G MBRS250G MBRS260G MBRS280G MBRS2100G
V
*
RRM
1
(V)
20
30 40
50
60
80
100
V
*
RMS
2
(V)
14
21 28
35
42
56
70
V
*
R
3
(V)
20 30 40 50 60
80 100
V
*
F
4
(V)
0.50
0.70 0.85
Operating temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=2.0A
@ 2010 Copyright By American First Semiconductor
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AVERAGE FORWARD CURRENT,(A)
PEAK FORWARD SURGE CURRENT,(A)
MBRS220G THRU MBRS2100G
Rating and characteristic curves
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
MBMRBSR2S2202G0~GM~BMRBSR2S120400GG
2.4 2.0 1.6 1.2
0.8
0.4 0 0 20 40 60 80 100 120 140 160 180 200 LEAD TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
50
40
30
TJ=25 C
8.3ms Single Half
20 Sine Wave
JEDEC method
10
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
700 600 500 400 300 200 100
0 .01
FIG.4-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
REVERSE LEAKAGE CURRENT, (mA)
INSTANTANEOUS FORWARD CURRENT,(A)
MBRS280MGB~RMSB2R5M0S2BG1~R0MS0B2G2R0S2G6~0MGBRS240G
FIG.2-TYPICAL FORWARD CHARACTERISTICS
50
10 3.0 1.0
0.1
TJ=25 C
Pulse Width 300us 1% Duty Cycle
.01 .1
.3 .5 .7 .9 1.1 1.3 1.5
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE CHARACTERISTICS
100
10
1.0
TJ=75 C
.1
TJ=25 C
.01 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
JUNCTION CAPACITANCE,(pF)
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