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MBRS2100G Dataheets PDF



Part Number MBRS2100G
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description 2.0A Surface Mount Schottky Barrier Rectifiers
Datasheet MBRS2100G DatasheetMBRS2100G Datasheet (PDF)

Chip Schottky Barrier Rectifier MBRS220G THRU MBRS2100G 2.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • S.

  MBRS2100G   MBRS2100G



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Chip Schottky Barrier Rectifier MBRS220G THRU MBRS2100G 2.0A Surface Mount Schottky Barrier Rectifiers -20V-200V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500/228 • Suffix "-H" indicates Halogen-free parts, ex. MBRS220G-H. Mechanical data • Epoxy: UL94-V0 rated frame retardant • Case: Molded plastic, DO-214AC / SMA • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: lndicated by cathode band • Mounting Position: Any • Weight: Approximated 0.05 gram Package outline SMA 0.196(4.9) 0.180(4.5) 0.012(0.3) Typ. 0.106(2.7) 0.091(2.3) 0.032(0.8) Typ. 0.068(1.7) 0.060(1.5) 0.032 (0.8) Typ. Dimensions in inches and (millimeters) Maximum ratings (AT T A=25oC unless otherwise noted) PARAMETER Forward rectified current See Fig.1 CONDITIONS Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient Junction to case f=1MHz and applied 4V DC reverse voltage Symbol MIN. IO IFSM TYP. MAX. UNIT 2.0 A 50 A IR RθJA RθJC CJ TSTG 0.5 mA 10 55 OC/W 30 OC/W 160 pF -65 +175 OC SYMBOLS MBRS220G MBRS230G MBRS240G MBRS250G MBRS260G MBRS280G MBRS2100G V * RRM 1 (V) 20 30 40 50 60 80 100 V * RMS 2 (V) 14 21 28 35 42 56 70 V * R 3 (V) 20 30 40 50 60 80 100 V * F 4 (V) 0.50 0.70 0.85 Operating temperature TJ, (OC) -55 to +125 -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=2.0A @ 2010 Copyright By American First Semiconductor Page 1/2 AVERAGE FORWARD CURRENT,(A) PEAK FORWARD SURGE CURRENT,(A) MBRS220G THRU MBRS2100G Rating and characteristic curves FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE MBMRBSR2S2202G0~GM~BMRBSR2S120400GG 2.4 2.0 1.6 1.2 0.8 0.4 0 0 20 40 60 80 100 120 140 160 180 200 LEAD TEMPERATURE,( C) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 50 40 30 TJ=25 C 8.3ms Single Half 20 Sine Wave JEDEC method 10 0 1 5 10 50 100 NUMBER OF CYCLES AT 60Hz 700 600 500 400 300 200 100 0 .01 FIG.4-TYPICAL JUNCTION CAPACITANCE .05 .1 .5 1 5 10 REVERSE VOLTAGE,(V) 50 100 REVERSE LEAKAGE CURRENT, (mA) INSTANTANEOUS FORWARD CURRENT,(A) MBRS280MGB~RMSB2R5M0S2BG1~R0MS0B2G2R0S2G6~0MGBRS240G FIG.2-TYPICAL FORWARD CHARACTERISTICS 50 10 3.0 1.0 0.1 TJ=25 C Pulse Width 300us 1% Duty Cycle .01 .1 .3 .5 .7 .9 1.1 1.3 1.5 FORWARD VOLTAGE,(V) FIG.5 - TYPICAL REVERSE CHARACTERISTICS 100 10 1.0 TJ=75 C .1 TJ=25 C .01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) JUNCTION CAPACITANCE,(pF) www.First-semi.com Page 2/2 .


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