Document
Schottky Barrier Rectifier
MBR320NG THRU MBR3100NG
3.0A Leaded Type Schottky Barrier Rectifiers - 20V-200V
Features
• Axial lead type devices for through hole design. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of
MIL-STD-19500 /228 • Suffix "-H" indicates Halogen free parts, ex. MBR320NG-H.
Package outline DO-201AD
.220(5.6)
.197(5.0) DIA.
1.0(25.4) MIN.
.375(9.5) .285(7.2)
Mechanical data
• Epoxy:UL94-V0 rated flame retardant • Case : Molded plastic, DO-201AD • Terminals : Solder plated, solderable per MIL-STD-202,
Method 208 guranteed • Polarity :Color band denotes cathode end • Mounting Position : Any • Weight :Approximated 1.10 gram
.052(1.3)
.048(1.2) DIA.
1.0(25.4) MIN.
Dimensions in inches and (millimeters)
Maximum ratings (AT TA=25oC unless otherwise noted)
PARAMETER
CONDITIONS
Forward rectified current
See Fig.2
Forward surge current
Reverse current Thermal resistance Diode junction capacitance Storage temperature
8.3ms single half sine-wave superimposed on rate load (JEDEC methode)
VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage
Symbol MIN. TYP. MAX. UNIT IO 3.0 A
IFSM 80 A
IR
RθJA CJ TSTG
0.5 mA
30 20 OC/W 250 pF -65 +175 OC
SYMBOLS
MBR320NG MBR330NG MBR340NG MBR350NG MBR360NG MBR380NG MBR3100NG MBR3150NG MBR3200NG
V
RR
*
M
1
(V)
20 30 40
50
60
80
100
150
200
V
*
RMS
2
(V)
14
21 28
35
42
56
70
105
140
V
*
R
3
(V)
20 30 40 50
60 80
100
150
200
V
*
F
4
(V)
Operating temperature
TJ, (OC)
0.55 -55 to +125
0.70
0.85
0.90 0.95
-55 to +150
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@IF=3.0A
@ 2010 Copyright By American First Semiconductor
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AVERAGE FORWARD CURRENT,(A)
PEAK FORWAARD SURGE CURRENT,(A)
MBR320NG THRU MBR3100NG
Rating and characteristic curves
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
3.0 2.5 2.0 1.5
1.0
0.5 0
0
MBR350NG~MBR3200NG MBR320NG~MBR340NG
20 40 60 80 100 120 140 160 180 200 LEAD TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
100
80
60
TJ=25 C
8.3ms Single Half
40 Sine Wave
JEDEC method
20
0
1
5 10
50 100
NUMBER OF CYCLES AT 60Hz
700 600 500 400 300 200 100
0 .01
FIG.4-TYPICAL JUNCTION CAPACITANCE
.05 .1
.5 1
5 10
REVERSE VOLTAGE,(V)
50 100
REVERSE LEAKAGE CURRENT, (mA)
INSTANTANEOUS FORWARD CURRENT,(A)
20~40V 50~60V 1508V0~100V 200V
FIG.2-TYPICAL FORWARD CHARACTERISTICS
10 3.0 1.0
o
TJ=25 C
Pulse Width 300us 1% Duty Cycle
0.1
.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
FORWARD VOLTAGE,(V)
FIG.5 - TYPICAL REVERSE
CHARACTERISTICS 100
10
1.0 .1
TJ=75 C TJ=25 C
.01 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
JUNCTION CAPACITANCE,(pF)
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