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MBR360NG

American First Semiconductor

3.0A Leaded Type Schottky Barrier Rectifiers

Schottky Barrier Rectifier MBR320NG THRU MBR3100NG 3.0A Leaded Type Schottky Barrier Rectifiers - 20V-200V Features • ...


American First Semiconductor

MBR360NG

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Description
Schottky Barrier Rectifier MBR320NG THRU MBR3100NG 3.0A Leaded Type Schottky Barrier Rectifiers - 20V-200V Features Axial lead type devices for through hole design. Low power loss, high efficiency. High current capability, low forward voltage drop. High surge capability. Guardring for overvoltage protection. Ultra high-speed switching. Silicon epitaxial planar chip, metal silicon junction. Lead-free parts meet environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen free parts, ex. MBR320NG-H. Package outline DO-201AD .220(5.6) .197(5.0) DIA. 1.0(25.4) MIN. .375(9.5) .285(7.2) Mechanical data Epoxy:UL94-V0 rated flame retardant Case : Molded plastic, DO-201AD Terminals : Solder plated, solderable per MIL-STD-202, Method 208 guranteed Polarity :Color band denotes cathode end Mounting Position : Any Weight :Approximated 1.10 gram .052(1.3) .048(1.2) DIA. 1.0(25.4) MIN. Dimensions in inches and (millimeters) Maximum ratings (AT TA=25oC unless otherwise noted) PARAMETER CONDITIONS Forward rectified current See Fig.2 Forward surge current Reverse current Thermal resistance Diode junction capacitance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to ambient f=1MHz and applied 4V DC reverse voltage Symbol MIN. TYP. MAX. UNIT IO 3.0 A IFSM 80 A IR RθJA CJ TSTG 0.5 mA 30 20 OC/W 250 pF -65 +175 OC SYMBOLS MBR320NG MBR330NG MB...




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