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FMSK650C-DG Dataheets PDF



Part Number FMSK650C-DG
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description 6.0A Surface Mount Schottky Barrier Rectifiers
Datasheet FMSK650C-DG DatasheetFMSK650C-DG Datasheet (PDF)

Chip Schottky Barrier Rectifier FMSK620C-DG THRU FMSK6200C-DG 6.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switchi.

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Chip Schottky Barrier Rectifier FMSK620C-DG THRU FMSK6200C-DG 6.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. • Low profile surface mounted application in order to optimize board space. • Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of MIL-STD-19500/228 • Suffix "-H" indicates Halogen free parts, ex. FMSK620C-DG-H. Mechanical data • Epoxy: UL94-V0 rated frame retardant • Case: Molded plastic, TO-252 / DPAK • Terminals: Solder plated, solderable per MIL-STD-750, Method 2026 • Polarity: lndicated by cathode band • Mounting Position: Any • Weight: Approximated 0.34 gram Package outline DPAK 0.048(1.20) 0.031(0.80) 0.264(6.70) 0.248(6.30) 0.217(5.50) 0.201(5.10) 0.098(2.50) 0.083(2.10) 0.024(0.60) 0.016(0.40) 0.244(6.20) 0.228(5.80) 0.114(2.90) 0.098(2.50) 0.185(4.70) 0.169(4.30) 0.039(1.00) 0.031(0.80) 0.024(0.60) 0.016(0.40) 0.032(0.80) 0.016(0.40) Dimensions in inches and (millimeters) Maximum ratings (AT TA =25oC unless otherwise noted) PARAMETER Forward rectified current See Fig.1 CONDITIONS Forward surge current Reverse current Thermal resistance Storage temperature 8.3ms single half sine-wave superimposed on rate load (JEDEC methode) VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to case Symbol IO IFSM MIN. TYP. MAX. UNIT 6.0 A 75 A 0.5 IR mA 20 RθJC 5.0 OC/W TSTG -65 +175 OC SYMBOLS FMSK620C-DG FMSK630C-DG FMSK640C-DG FMSK645C-DG FMSK650C-DG FMSK660C-DG FMSK680C-DG FMSK6100C-DG FMSK6150C-DG FMSK6200C-DG V * RRM 1 (V) 20 30 40 45 50 60 80 100 150 200 V RM * S 2 (V) 14 21 28 31.5 35 42 56 70 105 140 V * R 3 (V) 20 30 40 40 50 60 80 100 150 200 V * F 4 (V) 0.55 0.75 0.85 1.00 Operating temperature TJ, (OC) -55 to +125 -55 to +150 *1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@ IF = 3.0A @ 2010 Copyright By American First Semiconductor Page 1/2 AVERAGE FORWARD CURRENT,(A) FMSK620C-DG THRU FMSK6200C-DG Rating and characteristic curves FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE FMSK645C-DG~FMSK6200C-DG FMSK620C-DG~FMSK640C-DG 6 5 4 3 2 1 0 0 20 40 60 80 100 120 140 160 180 200 CASE TEMPERATURE,( C) PEAK FORWARD SURGE CURRENT,(A) FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT 90 75 TJ=25 °C 8.3ms Single Half 60 Sine Wave JEDEC method 45 30 15 0 1 10 NUMBER OF CYCLES AT 60Hz 100 INSTANTANEOUS FORWARD CURRENT,(A) 20~40V 45~60V 80~100V FIG.2-TYPICAL FORWARD CHARACTERISTICS 10 6.0 1.0 150~200V 0.1 o TJ=25 C Pulse Width 300us 1% Duty Cycle .01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 FORWARD VOLTAGE,(V) FIG.4 - TYPICAL REVERSE CHARACTERISTICS 10 1.0 0.1 .01 TJ=75 C TJ=25 C REVERSE LEAKAGE CURRENT, (mA) .001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,(%) www.First-semi.com Page 2/2 .


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