Document
Chip Schottky Barrier Rectifier
FMSK620C-DG THRU FMSK6200C-DG
6.0A Surface Mount Schottky Barrier Rectifiers - 20V-100V
Features
• Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
• Low profile surface mounted application in order to
optimize board space.
• Low power loss, high efficiency. • High current capability, low forward voltage drop. • High surge capability. • Guardring for overvoltage protection. • Ultra high-speed switching. • Silicon epitaxial planar chip, metal silicon junction. • Lead-free parts meet environmental standards of
MIL-STD-19500/228
• Suffix "-H" indicates Halogen free parts, ex. FMSK620C-DG-H.
Mechanical data
• Epoxy: UL94-V0 rated frame retardant • Case: Molded plastic, TO-252 / DPAK • Terminals: Solder plated, solderable per MIL-STD-750,
Method 2026
• Polarity: lndicated by cathode band • Mounting Position: Any • Weight: Approximated 0.34 gram
Package outline DPAK
0.048(1.20) 0.031(0.80)
0.264(6.70) 0.248(6.30)
0.217(5.50) 0.201(5.10)
0.098(2.50) 0.083(2.10)
0.024(0.60) 0.016(0.40)
0.244(6.20) 0.228(5.80)
0.114(2.90) 0.098(2.50)
0.185(4.70) 0.169(4.30)
0.039(1.00) 0.031(0.80)
0.024(0.60) 0.016(0.40)
0.032(0.80) 0.016(0.40)
Dimensions in inches and (millimeters)
Maximum ratings (AT TA =25oC unless otherwise noted)
PARAMETER Forward rectified current
See Fig.1
CONDITIONS
Forward surge current
Reverse current Thermal resistance Storage temperature
8.3ms single half sine-wave superimposed on rate load (JEDEC methode)
VR = VRRM TJ = 25OC VR = VRRM TJ = 100OC Junction to case
Symbol IO
IFSM
MIN.
TYP.
MAX. UNIT 6.0 A
75 A
0.5
IR
mA 20
RθJC
5.0 OC/W
TSTG
-65
+175 OC
SYMBOLS
FMSK620C-DG FMSK630C-DG FMSK640C-DG FMSK645C-DG FMSK650C-DG FMSK660C-DG FMSK680C-DG FMSK6100C-DG FMSK6150C-DG FMSK6200C-DG
V
*
RRM
1
(V)
20
30
40
45
50
60
80 100
150
200
V
RM
*
S
2
(V)
14
21
28 31.5 35
42
56 70
105
140
V
*
R
3
(V)
20 30
40 40 50 60
80 100 150 200
V
*
F
4
(V)
0.55
0.75 0.85 1.00
Operating temperature
TJ, (OC)
-55 to +125
-55 to +150
*1 Repetitive peak reverse voltage *2 RMS voltage *3 Continuous reverse voltage *4 Maximum forward voltage@ IF = 3.0A
@ 2010 Copyright By American First Semiconductor
Page 1/2
AVERAGE FORWARD CURRENT,(A)
FMSK620C-DG THRU FMSK6200C-DG
Rating and characteristic curves
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
FMSK645C-DG~FMSK6200C-DG FMSK620C-DG~FMSK640C-DG
6 5 4 3
2 1 0
0 20 40 60 80 100 120 140 160 180 200 CASE TEMPERATURE,( C)
PEAK FORWARD SURGE CURRENT,(A)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
90
75
TJ=25 °C
8.3ms Single Half
60 Sine Wave
JEDEC method
45
30
15
0 1
10
NUMBER OF CYCLES AT 60Hz
100
INSTANTANEOUS FORWARD CURRENT,(A)
20~40V 45~60V 80~100V
FIG.2-TYPICAL FORWARD CHARACTERISTICS
10 6.0
1.0
150~200V
0.1
o
TJ=25 C Pulse Width 300us
1% Duty Cycle
.01 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
FORWARD VOLTAGE,(V)
FIG.4 - TYPICAL REVERSE
CHARACTERISTICS 10
1.0 0.1 .01
TJ=75 C TJ=25 C
REVERSE LEAKAGE CURRENT, (mA)
.001 0 20 40 60 80 100 120 140
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
www.First-semi.com
Page 2/2
.