Document
CREAT BY ART MBR3040PTG THRU MBR30200PTG
30.0 AMPS. Schottky Barrier Rectifiers
TO-3P/TO-247AD
Features
Metal silicon junction, majority carrier conduction Plastic material used carriers Underwriters Laboratory Classification 94V-0 High surge capability Low power loss, high efficiency High current capability, low forward voltage drop For use in low voltage - high frequency inventers, free wheeling, and polarity protection applications Guard-ring for overvoltage protection High temperature soldering guaranteed:
260℃/10 seconds/.17", (4.3mm) from case Green compound with suffix "G" on packing code & prefix "G" on datecode
1 2 3
1
3
2
Mechanical Data
Case: JEDEC TO-3P/TO-247AD molded plastic Polarity: As marked Terminals: Pure tin plated, lead free, solderable per MIL-STD-750, Method 2026 Mounting position:Any Weight: 6.12 grams Mounting torque: 10 in- lbs, max
MARKING DIAGRAM
YAWW MBR30XXPT
Y = Year A = Assembly Location WW = Work Week MBR30XXPT = Specific Device Code
Maximum Ratings and Electrical Characteristics
Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%
Type Number
Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current
Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=105℃
Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method)
Peak Repetitive Reverse Surge Current (Note 1)
Maximum Instantaneous Forward Voltage (Note 2) IF=15A, TA=25℃ IF=15A, TA=125℃ IF=30A, TA=25℃ IF=30A, TA=125℃
Maximum Reverse Current @ Rated VR
Voltage Rate of Change,(Rated VR) Typical Junction Capacitance Maximum Thermal Resistance Per Leg Operating Temperature Range
TA=25 ℃ TA=125 ℃
Storage Temperature Range
Note 1: 2.0uS Pulse Width, f=1.0KHz Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle
Symbol
VRRM VRMS VDC IF(AV)
MBR 3040 PTG
40
28
40
MBR 3045 PTG
45
31
45
MBR 3050 PTG
50
35
50
MBR 3060 PTG
60
MBR 3080
PTG 80
42 56
60 80
30
MBR MBR MBR 30100 30150 30200 PTG PTG PTG
100 150 200
70 105 140
100 150 200
IFRM
30
Unit
V V V A
A
IFSM IRRM
2
200 1
A A
VF
IR dV/dt
Cj RθjC TJ TSTG
-
0.75
0.85
0.95 1.05
0.60
0.65
0.75
0.92 -
V
0.82
-
- 1.02 1.10
0.73
-
- 0.98 -
1 20 15
0.5 10
0.1 mA
10000
V/us
600 460
320 pF
1.4 OC/W
- 65 to + 150
OC
- 65 to + 175
OC
@ 2010 Copyright By American First Semiconductor
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AVERAGE FORWARD A CURRENT (A)
FORWARD CURRENT (A)
CREAT BY ART MBR3040PTG THRU MBR30200PTG
RATINGS AND CHARACTERISTIC CURVES
FIG.1 FORWARD CURRENT DERATING CURVE 35
30
25
20
15
10 RESISTIVE OR
5 INDUCTIVELOAD
0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 CASE TEMPERATURE (oC)
PEAK FORWARD SURGE A CURRENT (A)
220 200 180 160 140 120 100 80 60 40 20
0
1
FIG. 2 MAXIMUM FORWARD SURGE CURRENT
8.3mS Single Half Sine Wave JEDEC Method
10 NUMBER OF CYCLES AT 60 Hz
100
FIG. 3 TYPICAL FORWARD CHARACTERISRICS 100
TA=150℃ 10
1
TA=25℃
0.1 MBR3040PT-45PT MBR3050PT-60PT
MBR3080PT-200PT
0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE (V)
REVERSE LEAKAGE CURRENT (mA)
FIG. 4 TYPICAL REVERSE CHARACTERISTICS 100
TA=125℃ 10
1
0.1
TA=25℃ 0.01
MBR3040PT-3045PT MBR3050PT-30200PT 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
10000
FIG. 5 TYPICAL JUNCTION CAPACITANCE
MBR3040PT-MBR3045PT
TA=25℃ f=1.0MHz Vsig=50mVp-p
MBR3050PT-MBR3060PT 1000
100 0.1
MBR3080PT-MBR30200PT
1 10 REVERSE VOLTAGE (V)
100
TRANSIENT THERMAL IMPEDANCE A (℃/W)
FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG
100
10
1
0.1 0.01
0.1 1 10 T-PULSE DURATION(s)
100
JUNCTION CAPACITANCE (pF) A
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MBR3040PTG THRU MBR30200PTG
TO-3P/TO-247AD
−T− C −B− E
N A
U
1 23
L
4
−Q− 0.63 (0.025) M T B M
P −Y−
K
F 2 PL
WJ
G D 3 PL
0.25 (0.010) M Y Q S
H
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER.
MILLIMETERS
DIM MIN MAX A 20.32 21.08 B 15.75 16.26 C 4.70 5.30 D 1.00 1.40 E 1.90 2.60 F 1.65 2.13 G 5.45 BSC H 1.50 2.49 J 0.40 0.80 K 19.81 20.83 L 5.40 6.20 N 4.32 5.49 P --- 4.50 Q 3.55 3.65 U 6.15 BSC W 2.87 3.12
INCHES
MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084
0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216
--- 0.177 0.140 0.144
0.242 BSC 0.113 0.123
STYLE 2: PIN 1. ANODE 2. CATHODE (S) 3. ANODE 2 4. CATHODES (S)
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