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MBR30200PTG Dataheets PDF



Part Number MBR30200PTG
Manufacturers American First Semiconductor
Logo American First Semiconductor
Description (MBR3040PTG - MBR30200PTG) 30.0 AMPS. Schottky Barrier Rectifiers
Datasheet MBR30200PTG DatasheetMBR30200PTG Datasheet (PDF)

CREAT BY ART MBR3040PTG THRU MBR30200PTG 30.0 AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD Features Metal silicon junction, majority carrier conduction Plastic material used carriers Underwriters Laboratory Classification 94V-0 High surge capability Low power loss, high efficiency High current capability, low forward voltage drop For use in low voltage - high frequency inventers, free wheeling, and polarity protection applications Guard-ring for overvoltage protection High temperature solde.

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CREAT BY ART MBR3040PTG THRU MBR30200PTG 30.0 AMPS. Schottky Barrier Rectifiers TO-3P/TO-247AD Features Metal silicon junction, majority carrier conduction Plastic material used carriers Underwriters Laboratory Classification 94V-0 High surge capability Low power loss, high efficiency High current capability, low forward voltage drop For use in low voltage - high frequency inventers, free wheeling, and polarity protection applications Guard-ring for overvoltage protection High temperature soldering guaranteed: 260℃/10 seconds/.17", (4.3mm) from case Green compound with suffix "G" on packing code & prefix "G" on datecode 1 2 3 1 3 2 Mechanical Data Case: JEDEC TO-3P/TO-247AD molded plastic Polarity: As marked Terminals: Pure tin plated, lead free, solderable per MIL-STD-750, Method 2026 Mounting position:Any Weight: 6.12 grams Mounting torque: 10 in- lbs, max MARKING DIAGRAM YAWW MBR30XXPT Y = Year A = Assembly Location WW = Work Week MBR30XXPT = Specific Device Code Maximum Ratings and Electrical Characteristics Rating at 25 ℃ ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20% Type Number Maximum Repetitive Peak Reverse Voltage Maximum RMS Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Current Peak Repetitive Forward Current (Rated VR, Square Wave, 20KHz) at Tc=105℃ Peak Forward Surge Current, 8.3 ms Single Half Sinewave Superimposed on Rated Load (JEDEC method) Peak Repetitive Reverse Surge Current (Note 1) Maximum Instantaneous Forward Voltage (Note 2) IF=15A, TA=25℃ IF=15A, TA=125℃ IF=30A, TA=25℃ IF=30A, TA=125℃ Maximum Reverse Current @ Rated VR Voltage Rate of Change,(Rated VR) Typical Junction Capacitance Maximum Thermal Resistance Per Leg Operating Temperature Range TA=25 ℃ TA=125 ℃ Storage Temperature Range Note 1: 2.0uS Pulse Width, f=1.0KHz Note 2: Pulse Test : 300uS Pulse Width, 1% Duty Cycle Symbol VRRM VRMS VDC IF(AV) MBR 3040 PTG 40 28 40 MBR 3045 PTG 45 31 45 MBR 3050 PTG 50 35 50 MBR 3060 PTG 60 MBR 3080 PTG 80 42 56 60 80 30 MBR MBR MBR 30100 30150 30200 PTG PTG PTG 100 150 200 70 105 140 100 150 200 IFRM 30 Unit V V V A A IFSM IRRM 2 200 1 A A VF IR dV/dt Cj RθjC TJ TSTG - 0.75 0.85 0.95 1.05 0.60 0.65 0.75 0.92 - V 0.82 - - 1.02 1.10 0.73 - - 0.98 - 1 20 15 0.5 10 0.1 mA 10000 V/us 600 460 320 pF 1.4 OC/W - 65 to + 150 OC - 65 to + 175 OC @ 2010 Copyright By American First Semiconductor Page 1/3 AVERAGE FORWARD A CURRENT (A) FORWARD CURRENT (A) CREAT BY ART MBR3040PTG THRU MBR30200PTG RATINGS AND CHARACTERISTIC CURVES FIG.1 FORWARD CURRENT DERATING CURVE 35 30 25 20 15 10 RESISTIVE OR 5 INDUCTIVELOAD 0 0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150 CASE TEMPERATURE (oC) PEAK FORWARD SURGE A CURRENT (A) 220 200 180 160 140 120 100 80 60 40 20 0 1 FIG. 2 MAXIMUM FORWARD SURGE CURRENT 8.3mS Single Half Sine Wave JEDEC Method 10 NUMBER OF CYCLES AT 60 Hz 100 FIG. 3 TYPICAL FORWARD CHARACTERISRICS 100 TA=150℃ 10 1 TA=25℃ 0.1 MBR3040PT-45PT MBR3050PT-60PT MBR3080PT-200PT 0.01 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 FORWARD VOLTAGE (V) REVERSE LEAKAGE CURRENT (mA) FIG. 4 TYPICAL REVERSE CHARACTERISTICS 100 TA=125℃ 10 1 0.1 TA=25℃ 0.01 MBR3040PT-3045PT MBR3050PT-30200PT 0.001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) 10000 FIG. 5 TYPICAL JUNCTION CAPACITANCE MBR3040PT-MBR3045PT TA=25℃ f=1.0MHz Vsig=50mVp-p MBR3050PT-MBR3060PT 1000 100 0.1 MBR3080PT-MBR30200PT 1 10 REVERSE VOLTAGE (V) 100 TRANSIENT THERMAL IMPEDANCE A (℃/W) FIG. 6 TYPICAL TRANSIENT THERMAL IMPEDANCE PER LEG 100 10 1 0.1 0.01 0.1 1 10 T-PULSE DURATION(s) 100 JUNCTION CAPACITANCE (pF) A www.First-semi.com Page 2/3 MBR3040PTG THRU MBR30200PTG TO-3P/TO-247AD −T− C −B− E N A U 1 23 L 4 −Q− 0.63 (0.025) M T B M P −Y− K F 2 PL WJ G D 3 PL 0.25 (0.010) M Y Q S H NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. MILLIMETERS DIM MIN MAX A 20.32 21.08 B 15.75 16.26 C 4.70 5.30 D 1.00 1.40 E 1.90 2.60 F 1.65 2.13 G 5.45 BSC H 1.50 2.49 J 0.40 0.80 K 19.81 20.83 L 5.40 6.20 N 4.32 5.49 P --- 4.50 Q 3.55 3.65 U 6.15 BSC W 2.87 3.12 INCHES MIN MAX 0.800 8.30 0.620 0.640 0.185 0.209 0.040 0.055 0.075 0.102 0.065 0.084 0.215 BSC 0.059 0.098 0.016 0.031 0.780 0.820 0.212 0.244 0.170 0.216 --- 0.177 0.140 0.144 0.242 BSC 0.113 0.123 STYLE 2: PIN 1. ANODE 2. CATHODE (S) 3. ANODE 2 4. CATHODES (S) www.First-semi.com Page 3/3 .


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