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VCES = 650V
IC = 60A, TC =100°C
tSC 5.5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.7V @ IC = 48A
Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding
Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant
C
IRGP4760PbF IRGP4760-EPbF
Insulated Gate Bipolar Transistor
G
E
n-channel
G Gate
E GC IRGP4760PbF TO‐247AC
C Collector
E GC
IRGP4760‐EPbF TO‐247AD
E Emitter
Benefits High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly
Base part number
IRGP4760PbF IRGP4760-EPbF
Package Type
TO-247AC TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP4760PbF IRGP4760-EPbF
Absolute Maximum Ratings
VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
Max. 650 90 60 144 192 ±20 325 160 -40 to +175
300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Units V A
V W
C
Thermal Resistance
Parameter
RJC RCS RJA
Thermal Resistance Junction-to-Case Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min. ––– ––– –––
Typ. ––– 0.24 40
Max. 0.46 ––– –––
Units °C/W
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August 22, 2014
IRGP4760PbF/IRGP4760-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V(BR)CES
Collector-to-Emitter Breakdown Voltage
650
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage —
— 0.69
VCE(on)
Collector-to-Emitter Saturation Voltage
— 1.7 — 2.1
VGE(th)
Gate Threshold Voltage
5.5 —
VGE(th)/TJ Threshold Voltage Temperature Coeff.
— -23
gfe Forward Transconductance
— 31
ICES
Collector-to-Emitter Leakage Current
— 1.0 — 700
IGES Gate-to-Emitter Leakage Current
——
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
— —
2.0 — 7.4
—
— 25 — ±100
V VGE = 0V, IC = 100µA V/°C VGE = 0V, IC = 3mA (25°C-175°C)
V IC = 48A, VGE = 15V, TJ = 25°C IC = 48A, VGE = 15V, TJ = 175°C
V VCE = VGE, IC = 1.4mA
mV/°C VCE = VGE, IC = 1.4mA (25°C-150°C)
S VCE = 50V, IC = 48A, PW = 20µs µA VGE = 0V, VCE = 650V
VGE = 0V, VCE = 650V, TJ = 175°C nA VGE = ±20V
Parameter
Min. Typ. Max Units
Conditions
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon
Eoff
Etotal
td(on)
tr
td(off)
tf Cies Coes Cres
RBSOA
Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Reverse Bias Safe Operating Area
SCSOA Short Circuit Safe Operating Area
— 96 145 — 30 45 — 40 60 — 1.7 2.6 — 1.0 1.9 — 2.7 4.5 — 70 90 — 60 80 — 140 160 — 30 50 — 2.9 — — 1.4 — — 4.3 — — 55 — — 60 — — 145 — — 65 — — 3000 — — 150 — — 80 —
FULL SQUARE
5.5 — —
IC = 48A nC VGE = 15V
VCC = 400V
mJ IC = 48A, VCC = 400V, VGE=15V RG = 10, L = 210µH, TJ = 25°C
Energy losses include tail & diode ns reverse recovery
mJ IC = 48A, VCC = 400V, VGE=15V RG = 10, L = 210µH, TJ = 175°C
Energy losses include tail & diode ns reverse recovery
VGE = 0V pF VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 192A VCC = 520V, Vp ≤ 650V VGE = +20V to 0V
µs
TJ = 150°C,VCC = 400V, Vp ≤ 650V VGE = +15V to 0V
Notes:
VCC = 80% (VCES), VGE = 20V. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Maximum limits are based on statistical sample size characterization. Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement.
2 www.irf.com © 2014 International Rectifier
Submit Datasheet Feedback
August 22, 2014
IRGP4760PbF/IRGP4760-EPbF
100 For both:
90 Duty cycle : 50% Tj = 175°C
80 Tcase = 100°C Gate drive as specified
70 Power Dissipation = 163W
Load Current ( A )
60 Square Wave: 50 VCC
40 I
30
Diode as specified
20
10 0.1
100
1 10
f , Frequency ( kHz )
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = IRMS of fundamental) 350
100
300 80
250 60 200
Ptot (W)
IC (A)
40
20
0 25 50 75 100 125 150 175 TC (°C)
150
100
50
0 25 50 75 100 125 150 175 TC (°C)
Fig. 2 - Maximum D.