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IRGP4760PbF Dataheets PDF



Part Number IRGP4760PbF
Manufacturers International Rectifier
Logo International Rectifier
Description Insulated Gate Bipolar Transistor
Datasheet IRGP4760PbF DatasheetIRGP4760PbF Datasheet (PDF)

  VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant C    IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor G E n-channel G Gate E GC IRGP4760PbF  TO‐247AC  C Collector E GC IRGP4760‐EPbF  .

  IRGP4760PbF   IRGP4760PbF


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  VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ(max) = 175°C VCE(ON) typ. = 1.7V @ IC = 48A Applications • Industrial Motor Drive • UPS • Solar Inverters • Welding Features Low VCE(ON) and Switching Losses 5.5µs Short Circuit SOA Square RBSOA Maximum Junction Temperature 175°C Positive VCE (ON) Temperature Coefficient Lead-Free, RoHs compliant C    IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor G E n-channel G Gate E GC IRGP4760PbF  TO‐247AC  C Collector E GC IRGP4760‐EPbF  TO‐247AD  E Emitter Benefits High Efficiency in a Wide Range of Applications Rugged Transient Performance Increased Reliability Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP4760PbF IRGP4760-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP4760PbF IRGP4760-EPbF Absolute Maximum Ratings VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Parameter Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V Clamped Inductive Load Current, VGE=20V  Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 650 90 60 144 192 ±20 325 160 -40 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Units V A  V W C Thermal Resistance Parameter RJC RCS RJA Thermal Resistance Junction-to-Case  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Min. ––– ––– ––– Typ. ––– 0.24 40 Max. 0.46 ––– ––– Units °C/W 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 22, 2014   IRGP4760PbF/IRGP4760-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 650 V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage — — 0.69 VCE(on) Collector-to-Emitter Saturation Voltage — 1.7 — 2.1 VGE(th) Gate Threshold Voltage 5.5 — VGE(th)/TJ Threshold Voltage Temperature Coeff. — -23 gfe Forward Transconductance — 31 ICES Collector-to-Emitter Leakage Current — 1.0 — 700 IGES Gate-to-Emitter Leakage Current —— Switching Characteristics @ TJ = 25°C (unless otherwise specified) — — 2.0 — 7.4 — — 25 — ±100 V VGE = 0V, IC = 100µA  V/°C VGE = 0V, IC = 3mA (25°C-175°C) V IC = 48A, VGE = 15V, TJ = 25°C IC = 48A, VGE = 15V, TJ = 175°C V VCE = VGE, IC = 1.4mA mV/°C VCE = VGE, IC = 1.4mA (25°C-150°C) S VCE = 50V, IC = 48A, PW = 20µs µA VGE = 0V, VCE = 650V VGE = 0V, VCE = 650V, TJ = 175°C nA VGE = ±20V Parameter Min. Typ. Max Units Conditions Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres RBSOA Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance Reverse Bias Safe Operating Area SCSOA   Short Circuit Safe Operating Area   — 96 145 — 30 45 — 40 60 — 1.7 2.6 — 1.0 1.9 — 2.7 4.5 — 70 90 — 60 80 — 140 160 — 30 50 — 2.9 — — 1.4 — — 4.3 — — 55 — — 60 — — 145 — — 65 — — 3000 — — 150 — — 80 — FULL SQUARE 5.5  —   —   IC = 48A nC VGE = 15V VCC = 400V mJ   IC = 48A, VCC = 400V, VGE=15V RG = 10, L = 210µH, TJ = 25°C Energy losses include tail & diode ns  reverse recovery  mJ  IC = 48A, VCC = 400V, VGE=15V RG = 10, L = 210µH, TJ = 175°C Energy losses include tail & diode ns reverse recovery   VGE = 0V pF VCC = 30V f = 1.0MHz TJ = 175°C, IC = 192A VCC = 520V, Vp ≤ 650V VGE = +20V to 0V µs   TJ = 150°C,VCC = 400V, Vp ≤ 650V VGE = +15V to 0V Notes:  VCC = 80% (VCES), VGE = 20V.  R is measured at TJ of approximately 90°C.  Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  Maximum limits are based on statistical sample size characterization.  Pulse width limited by max. junction temperature.  Values influenced by parasitic L and C in measurement. 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback August 22, 2014   IRGP4760PbF/IRGP4760-EPbF 100 For both: 90 Duty cycle : 50% Tj = 175°C 80 Tcase = 100°C Gate drive as specified 70 Power Dissipation = 163W Load Current ( A ) 60 Square Wave: 50 VCC 40 I 30 Diode as specified 20 10 0.1 100 1 10 f , Frequency ( kHz ) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 350 100 300 80 250 60 200 Ptot (W) IC (A) 40 20 0 25 50 75 100 125 150 175 TC (°C) 150 100 50 0 25 50 75 100 125 150 175 TC (°C) Fig. 2 - Maximum D.


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