IRGP6630DPbF

  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications  Welding  H Bridge Converters G E n-channel G Gate E C G IRGP6630DPbF  TO‐247AC  C Collector GCE IRGP6630D‐EPbF  TO‐247AD  E Emitter Features Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of Applications Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP6630DPbF IRGP6630D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP6630DPbF IRGP6630D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IFRM @ TC = 100°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  Diode Repetitive Peak Forward Current VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Pow...