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IRGP6630D-EPbF Dataheets PDF



Part Number IRGP6630D-EPbF
Manufacturers International Rectifier
Logo International Rectifier
Description Insulated Gate Bipolar Transistor
Datasheet IRGP6630D-EPbF DatasheetIRGP6630D-EPbF Datasheet (PDF)

  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications  Welding  H Bridge Converters G E n-channel G Gate E C G IRGP6630DPbF  TO‐247AC  C Collector GCE IRGP6630D‐EPbF  TO‐247AD  E Emitter Features Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C.

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  VCES = 600V IC = 30A, TC =100°C IRGP6630DPbF IRGP6630D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode   C  C C tSC 5µs, TJ(max) = 175°C VCE(ON) typ. = 1.65V @ IC = 18A Applications  Welding  H Bridge Converters G E n-channel G Gate E C G IRGP6630DPbF  TO‐247AC  C Collector GCE IRGP6630D‐EPbF  TO‐247AD  E Emitter Features Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters Square RBSOA and Maximum Temperature of 175°C 5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant Benefits High Efficiency in a Wide Range of Applications Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly Base part number IRGP6630DPbF IRGP6630D-EPbF Package Type TO-247AC TO-247AD Standard Pack Form Quantity Tube 25 Tube 25 Orderable Part Number IRGP6630DPbF IRGP6630D-EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IFRM @ TC = 100°C Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V  Diode Repetitive Peak Forward Current VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Continuous Gate-to-Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw Max. 600 47 30 54 72 15 ±20 192 96 -40 to +175 300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m) Units V A V W °C     Thermal Resistance Parameter RJC (IGBT) RJC (Diode) RCS RJA Thermal Resistance Junction-to-Case-(each IGBT)  Thermal Resistance Junction-to-Case-(each Diode)  Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount) Min. ––– ––– ––– ––– Typ. ––– ––– 0.24 ––– 1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback Max. 0.78 5.9 ––– 40 Units °C/W April 14, 2014   IRGP6630DPbF/IRGP6630D-EPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage VCE(on) Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES VF   Gate Threshold Voltage Threshold Voltage Temperature Coeff. Forward Transconductance Collector-to-Emitter Leakage Current Gate-to-Emitter Leakage Current Diode Forward Voltage Drop   600 — — — — 4.0 — — — — — — — — 0.94 1.65 2.05 2.10 — -20 12 1.0 410 — 1.6 1.3 Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon Eoff Etotal td(on) tr td(off) tf Cies Coes Cres Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance — 30 — 10 — 15 — 75 — 350 — 425 — 40 — 25 — 95 — 20 — 230 — 570 — 800 — 30 — 25 — 100 — 80 — 1080 — 70 — 30 Max. — — 1.95 — — 6.5 — — 25 — ±100 2.3 — Max — — — — — — — — — — — — — — — — — — — — RBSOA Reverse Bias Safe Operating Area FULL SQUARE SCSOA   Erec trr Irr Short Circuit Safe Operating Area   Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current 5  —   —   — 180 — — 70 — — 15 — Units Conditions V VGE = 0V, IC = 100µA  V/°C VGE = 0V, IC = 1.2mA (25°C-175°C) IC = 18A, VGE = 15V, TJ = 25°C V IC = 18A, VGE = 15V, TJ = 150°C IC = 18A, VGE = 15V, TJ = 175°C V VCE = VGE, IC = 500µA mV/°C VCE = VGE, IC = 500µA (25°C-175°C) S VCE = 50V, IC = 18A, PW = 20µs µA VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C nA VGE = ±20V V IF = 6A IF = 6A, TJ = 175°C Units Conditions IC = 18A nC VGE = 15V VCC = 400V µJ   IC = 18A, VCC = 400V, VGE=15V RG = 22, TJ = 25°C Energy losses include tail & diode ns  reverse recovery  µJ  IC = 18A, VCC = 400V, VGE=15V RG = 22, TJ = 175°C Energy losses include tail & diode ns reverse recovery   VGE = 0V pF VCC = 30V f = 1.0MHz TJ = 175°C, IC = 72A VCC = 480V, Vp ≤ 600V VGE = +20V to 0V µs   TJ = 150°C,VCC = 400V, Vp ≤ 600V VGE = +15V to 0V µJ TJ = 175°C ns VCC = 400V, IF = 6A, VGE = 15V A Rg = 22L = 0.68mH, L=150nH Notes:  VCC = 80% (VCES), VGE = 20V, Rg = 22L=620µH.  R is measured at TJ of approximately 90°C.  Refer to AN-1086 for guidelines for measuring V(BR)CES safely.  Pulse width limited by max. junction temperature.  Values influenced by paras.


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