Document
VCES = 600V IC = 30A, TC =100°C
IRGP6630DPbF IRGP6630D-EPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C C
C
tSC 5µs, TJ(max) = 175°C
VCE(ON) typ. = 1.65V @ IC = 18A
Applications Welding H Bridge Converters
G
E
n-channel
G Gate
E C G IRGP6630DPbF TO‐247AC
C Collector
GCE
IRGP6630D‐EPbF TO‐247AD
E Emitter
Features Low VCE(ON) and Switching Losses Optimized Diode for Full Bridge Hard Switch Converters
Square RBSOA and Maximum Temperature of 175°C
5µs Short Circuit Positive VCE (ON) Temperature Co-efficient Lead-free, RoHS compliant
Benefits
High Efficiency in a Wide Range of Applications
Optimized for Welding and H Bridge Converters Improved Reliability due to Rugged Hard Switching Performance and High Power Capability Enables Short Circuit Protection Operation Excellent Current Sharing in Parallel Operation Environmentally friendly
Base part number
IRGP6630DPbF IRGP6630D-EPbF
Package Type
TO-247AC TO-247AD
Standard Pack
Form
Quantity
Tube
25
Tube
25
Orderable Part Number
IRGP6630DPbF IRGP6630D-EPbF
Absolute Maximum Ratings
Parameter
VCES IC @ TC = 25°C
IC @ TC = 100°C
ICM ILM IFRM @ TC = 100°C
Collector-to-Emitter Voltage Continuous Collector Current
Continuous Collector Current
Pulse Collector Current, VGE = 15V Clamped Inductive Load Current, VGE = 20V Diode Repetitive Peak Forward Current
VGE
PD @ TC = 25°C PD @ TC = 100°C TJ TSTG
Continuous Gate-to-Emitter Voltage
Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting Torque, 6-32 or M3 Screw
Max. 600 47
30 54 72 15
±20 192 96 -40 to +175
300 (0.063 in. (1.6mm) from case) 10 lbf·in (1.1 N·m)
Units V
A
V W °C
Thermal Resistance
Parameter
RJC (IGBT) RJC (Diode) RCS RJA
Thermal Resistance Junction-to-Case-(each IGBT) Thermal Resistance Junction-to-Case-(each Diode) Thermal Resistance, Case-to-Sink (flat, greased surface) Thermal Resistance, Junction-to-Ambient (typical socket mount)
Min. ––– ––– ––– –––
Typ. ––– ––– 0.24 –––
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Max. 0.78 5.9 ––– 40
Units °C/W
April 14, 2014
IRGP6630DPbF/IRGP6630D-EPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CES/TJ Temperature Coeff. of Breakdown Voltage
VCE(on)
Collector-to-Emitter Saturation Voltage
VGE(th) VGE(th)/TJ gfe
ICES
IGES
VF
Gate Threshold Voltage Threshold Voltage Temperature Coeff. Forward Transconductance
Collector-to-Emitter Leakage Current
Gate-to-Emitter Leakage Current
Diode Forward Voltage Drop
600 —
— — — 4.0
—
— — — — — —
— 0.94
1.65 2.05 2.10 —
-20
12 1.0 410 — 1.6 1.3
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
Min. Typ.
Qg Qge Qgc Eon Eoff Etotal td(on) tr td(off) tf Eon
Eoff Etotal td(on) tr td(off) tf Cies Coes Cres
Total Gate Charge (turn-on) Gate-to-Emitter Charge (turn-on) Gate-to-Collector Charge (turn-on) Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On delay time Rise time Turn-Off delay time Fall time Input Capacitance Output Capacitance Reverse Transfer Capacitance
— 30 — 10 — 15 — 75 — 350 — 425 — 40 — 25 — 95 — 20 — 230 — 570 — 800 — 30 — 25 — 100 — 80 — 1080 — 70 — 30
Max.
— —
1.95 — — 6.5
—
— 25 — ±100 2.3 —
Max
— — — — — — — — — — — — — — — — — — — —
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Erec trr Irr
Short Circuit Safe Operating Area
Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current
5 — —
— 180 — — 70 — — 15 —
Units
Conditions
V VGE = 0V, IC = 100µA V/°C VGE = 0V, IC = 1.2mA (25°C-175°C)
IC = 18A, VGE = 15V, TJ = 25°C V IC = 18A, VGE = 15V, TJ = 150°C
IC = 18A, VGE = 15V, TJ = 175°C V VCE = VGE, IC = 500µA
mV/°C VCE = VGE, IC = 500µA (25°C-175°C)
S VCE = 50V, IC = 18A, PW = 20µs
µA
VGE = 0V, VCE = 600V VGE = 0V, VCE = 600V, TJ = 175°C
nA VGE = ±20V
V
IF = 6A IF = 6A, TJ = 175°C
Units
Conditions
IC = 18A nC VGE = 15V
VCC = 400V
µJ IC = 18A, VCC = 400V, VGE=15V RG = 22, TJ = 25°C
Energy losses include tail & diode ns reverse recovery
µJ IC = 18A, VCC = 400V, VGE=15V RG = 22, TJ = 175°C
Energy losses include tail & diode ns reverse recovery
VGE = 0V pF VCC = 30V
f = 1.0MHz
TJ = 175°C, IC = 72A
VCC = 480V, Vp ≤ 600V
VGE = +20V to 0V
µs
TJ = 150°C,VCC = 400V, Vp ≤ 600V VGE = +15V to 0V
µJ TJ = 175°C ns VCC = 400V, IF = 6A, VGE = 15V
A Rg = 22L = 0.68mH, L=150nH
Notes:
VCC = 80% (VCES), VGE = 20V, Rg = 22L=620µH. R is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by max. junction temperature.
Values influenced by paras.