2SD2255

Power Transistors 2SD2255 Silicon NPN triple diffusion planar type Darlington For power amplification Complementary to 2SB1493 s Features q Optimum for 60W HiFi output q High foward current transfer ratio hFE: 5000 to 30000 q Low collector to emitter saturation voltage VCE(sat): <2.5V 4.0±0.1 15.0±0.5 13.0±0.5 10.5±0.5 Unit: mm 4.5±0.2 2.0±0.1 4.0±0.1 φ3.2±0.1 20.0±0.3 19.0±0.3 15.0±0.2 16.2±0.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings (TC=25˚C) Parameter Symbol Ratings Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C VCBO VCEO VEBO ICP IC PC 160 140 5 12 7 70 2.5 Junction temperature Storage temperature Tj 150 Tstg –55 to +150 Unit V V V A A W ˚C ˚C 2.0±0.2 1.1±0.1 1.4±0.3 5.45±0.3 10.9±0.5 0.6±0.2 123 1:Base 2:Collector 3:Emitter EIAJ:SC–65(a) TOP–3 Package(a) Internal Connection C B E s Electrical Characteristics (TC=25˚C) Parameter Symbol Conditions Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time ICBO ICEO IEBO VCEO hFE1 hFE2* VCE(sat) VBE(sat) fT ton tstg tf VCB = 160V, IE = 0 VCE = 140V, IB = 0 VEB = 5V, IC = 0 IC = 30mA, IB = 0 VCE = 5V, IC = 1A VCE = 5V, IC = 6A IC = 6A, IB = 6mA IC = 6A, IB = 6mA VCE = 10V, IC = 0.5A, f...