Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON HIGH VOLTAGE TRAN...
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
PNP SILICON HIGH VOLTAGE
TRANSISTOR
2N 5415, 16
TO-39 Metal Can Package
High Speed Switching and Linear amplifier Appliances in Military, Industrial and Commercial Equipment.
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
2N5415
2N5416
Collector Emitter Voltage
VCEO
200
300
Collector Base Voltage
VCBO
200
350
Emitter Base Voltage
VEBO
4
6
Collector Current Continuous
IC
(--------------------1------------------)
Base Current Continuous
IB
(-----------------0.5------------------)
Power Dissipation @ Ta=50ºC
PD
(--------------------1------------------)
Derate Above 25ºC
Power Dissipation@ Tc=25ºC
PD
(------------------10-------------------
Derate Above 25ºC
Junction Temperature
Tj
(--------------------200-----------------
Operating And Storage Junction
Tstg
-65 to +200
Temperature Range
UNITS V V V A A W
mW/ºC W
mW/ºC ºC
THERMAL RESISTANCE Junction to Ambient Junction to Case
Rth(j-a) Rth(j-c)
150 ºC/W 17.5 ºC/W
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Breakdown Voltage BVCEO(sus)*
IC=50mA,IB=0
Collector Cut off Current
ICBO VCB=175V, IE=0
VCB=280V, IE=0
Collector Cutoff Current
ICEO
VCE=150V, IB=0
VCE=250V, IB=0
Emitter Cut off Current
IEBO
VEB=4V, IC=0
VEB=6V, IC=0
2N5415 >200 <50
<50
<20
2N5416 >300
<50
<50
<20
UNITS...