Document
® STW9NB90
N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
S TW 9NB9 0
900 V
<1Ω
9.7 A
s TYPICAL RDS(on) = 0.85 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
3 2 1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V DS V DGR VGS
ID ID IDM (•) Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
Value 900 900 ± 30 9.7 6 38 190 1.52 4
-65 to 150 150
(1) I SD ≤ 9.7A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
Un it V V V A A A W
W /o C V/ns oC oC
July 1999
1/8
STW9NB90
THERMAL DATA
Rthj-case
R th j -a mb Rthc-sink
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead Temperature For Soldering Purpose
0.66
30 0.1 300
oC/W
oC/W oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l IAR
EAS
Parameter
Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max)
Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR, VDD = 50 V)
Max Value 9.7
600
Unit A
mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbo l V (BR)D SS
IDSS
IGSS
Pa ram et e r
Test Conditions
Dr ain- s ou rc e Breakdown Voltage
ID = 250 µ A VGS = 0
Zero G ate Voltage
VDS = Max Rating
Drain Current (VGS = 0) VDS = Max Rating oC
Tc = 125
Gate-body Leakage Current (VDS = 0)
VGS = ± 30 V
Min. 900
T yp.
Max.
Unit V
1 µA 50 µA
± 100 nA
ON (∗)
Symbo l VGS(th)
RDS(on)
ID(o n)
Pa ram et e r
Test Conditions
Gate Threshold Voltage
VDS = VGS ID = 250 µA
Static Drain-source O n VGS = 10 V ID = 4.8 A Resistance
On Stat e Drain Current VDS > ID(o n) x RDS(on )max VGS = 10 V
Min. 3
T yp. 4
Max. 5
Unit V
0.85 9.7
1
Ω Ω
A
DYNAMIC
Symbo l gfs (∗)
Ciss Coss Crss
Pa ram et e r
Forward Transconductance
Input Capacitance Output Capacitance Reverse Transfer Cap a ci t an c e
Test Conditions VDS > ID(o n) x RDS(on )ma x ID = 4.8 A
Min.
T yp. 8.8
Max.
Unit S
VDS = 25 V f = 1 MHz VGS = 0
2800 290 25
pF pF pF
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STW9NB90
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbo l
td(on) tr
Pa ram et e r
Turn-on Time Rise Time
Test Conditions
VDD = 450 V ID = 4.5 A
RG = 4.7 Ω
VGS = 10 V
Min.
T yp.
30 13
Max.
Unit
ns ns
Qg Tot al Gate Charge
VDD = 720 V ID = 9 A VGS = 10 V
Q gs Gat e-Source Charge RG = 4.7 Ω VGS = 10 V
Qgd Gate-Drain Charge
64 90 nC 16 nC 26 nC
SWITCHING OFF
Symbo l
tr (Voff) tf tc
Pa ram et e r
Off-voltage Rise Time Fall Time Cross-over Time
Test Conditions
VDD = 720 V ID = 9 A RG = 4.7 Ω VGS = 10 V
Min.
T yp.
26 26 35
Max.
Unit
ns ns ns
SOURCE DRAIN DIODE
Symbo l
Pa ram et e r
Test Conditions
ISD ISDM (•)
Source-drain Current Source-drain Current (pulsed)
VSD (∗) Forward On Voltage
ISD = 9. 7 A VGS = 0
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
ISD = 9 A di/dt = 100 A/µs VDD = 100 V Tj = 150 oC
I R RM
Reverse Recovery Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area
Min.
T yp.
Max.
9.7 38
Unit
A A
1000 11 23
1.6
V ns
µC A
Safe Operating Area
Thermal Impedance
3/8
STW9NB90
Output Characteristics
Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
4/8
Normalized Gate Threshold Voltage vs Temperature
STW9NB90
Normalized On Resistance vs Temperature
Source-drain Diode Forward Characteristics
5/8
STW9NB90
Fig. 1: Unclamped Inductive Load Test Circuit
Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
6/8
DIM.
A D E F F3 F4 G H L L3 L4 L5 M
STW9NB90
MIN. 4.7 2.2 0.4 1 2 3
15.3 19.7 14.2
2
TO-247 MECHANICAL DATA
mm TYP.
10.9
34.6 5.5
MAX. 5.3 2.6 0.8 1.4 2.4 3.4
15.9 20.3 14.8
3
MIN. 0.185 0.087 0.016 0.039 0.079 0.118
0.602 0.