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W9NB90 Dataheets PDF



Part Number W9NB90
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description STW9NB90
Datasheet W9NB90 DatasheetW9NB90 Datasheet (PDF)

® STW9NB90 N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET TYPE V DSS RDS(on) ID S TW 9NB9 0 900 V <1Ω 9.7 A s TYPICAL RDS(on) = 0.85 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending stri.

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® STW9NB90 N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET TYPE V DSS RDS(on) ID S TW 9NB9 0 900 V <1Ω 9.7 A s TYPICAL RDS(on) = 0.85 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE 3 2 1 TO-247 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Sy mb o l Parameter V DS V DGR VGS ID ID IDM (•) Ptot Drain-source Voltage (VGS = 0) Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor dv/dt(1) Peak Diode Recovery voltage slope Tstg Storage Temperature Tj Max. Operating Junction Temperature (•) Pulse width limited by safe operating area Value 900 900 ± 30 9.7 6 38 190 1.52 4 -65 to 150 150 (1) I SD ≤ 9.7A, di/dt ≤ 200A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX Un it V V V A A A W W /o C V/ns oC oC July 1999 1/8 STW9NB90 THERMAL DATA Rthj-case R th j -a mb Rthc-sink Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 0.66 30 0.1 300 oC/W oC/W oC/W oC AVALANCHE CHARACTERISTICS Symbo l IAR EAS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 oC, ID = IAR, VDD = 50 V) Max Value 9.7 600 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF Symbo l V (BR)D SS IDSS IGSS Pa ram et e r Test Conditions Dr ain- s ou rc e Breakdown Voltage ID = 250 µ A VGS = 0 Zero G ate Voltage VDS = Max Rating Drain Current (VGS = 0) VDS = Max Rating oC Tc = 125 Gate-body Leakage Current (VDS = 0) VGS = ± 30 V Min. 900 T yp. Max. Unit V 1 µA 50 µA ± 100 nA ON (∗) Symbo l VGS(th) RDS(on) ID(o n) Pa ram et e r Test Conditions Gate Threshold Voltage VDS = VGS ID = 250 µA Static Drain-source O n VGS = 10 V ID = 4.8 A Resistance On Stat e Drain Current VDS > ID(o n) x RDS(on )max VGS = 10 V Min. 3 T yp. 4 Max. 5 Unit V 0.85 9.7 1 Ω Ω A DYNAMIC Symbo l gfs (∗) Ciss Coss Crss Pa ram et e r Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Cap a ci t an c e Test Conditions VDS > ID(o n) x RDS(on )ma x ID = 4.8 A Min. T yp. 8.8 Max. Unit S VDS = 25 V f = 1 MHz VGS = 0 2800 290 25 pF pF pF 2/8 STW9NB90 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l td(on) tr Pa ram et e r Turn-on Time Rise Time Test Conditions VDD = 450 V ID = 4.5 A RG = 4.7 Ω VGS = 10 V Min. T yp. 30 13 Max. Unit ns ns Qg Tot al Gate Charge VDD = 720 V ID = 9 A VGS = 10 V Q gs Gat e-Source Charge RG = 4.7 Ω VGS = 10 V Qgd Gate-Drain Charge 64 90 nC 16 nC 26 nC SWITCHING OFF Symbo l tr (Voff) tf tc Pa ram et e r Off-voltage Rise Time Fall Time Cross-over Time Test Conditions VDD = 720 V ID = 9 A RG = 4.7 Ω VGS = 10 V Min. T yp. 26 26 35 Max. Unit ns ns ns SOURCE DRAIN DIODE Symbo l Pa ram et e r Test Conditions ISD ISDM (•) Source-drain Current Source-drain Current (pulsed) VSD (∗) Forward On Voltage ISD = 9. 7 A VGS = 0 trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD = 9 A di/dt = 100 A/µs VDD = 100 V Tj = 150 oC I R RM Reverse Recovery Current (∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % (•) Pulse width limited by safe operating area Min. T yp. Max. 9.7 38 Unit A A 1000 11 23 1.6 V ns µC A Safe Operating Area Thermal Impedance 3/8 STW9NB90 Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 Normalized Gate Threshold Voltage vs Temperature STW9NB90 Normalized On Resistance vs Temperature Source-drain Diode Forward Characteristics 5/8 STW9NB90 Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge test Circuit Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 6/8 DIM. A D E F F3 F4 G H L L3 L4 L5 M STW9NB90 MIN. 4.7 2.2 0.4 1 2 3 15.3 19.7 14.2 2 TO-247 MECHANICAL DATA mm TYP. 10.9 34.6 5.5 MAX. 5.3 2.6 0.8 1.4 2.4 3.4 15.9 20.3 14.8 3 MIN. 0.185 0.087 0.016 0.039 0.079 0.118 0.602 0.


T-52017D121J-FW-A-AAN W9NB90 LTW-420C5


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