STW9NB90
® STW9NB90
N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
S TW 9NB9 0
900 V
<1Ω
...
Description
® STW9NB90
N-CHANNEL 900V - 0.85Ω - 9.7A - TO-247 PowerMESH™ MOSFET
TYPE
V DSS
RDS(on)
ID
S TW 9NB9 0
900 V
<1Ω
9.7 A
s TYPICAL RDS(on) = 0.85 Ω s EXTREMELY HIGH dv/dt CAPABILITY s ± 30V GATE TO SOURCE VOLTAGE RATING s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED
DESCRIPTION Using the latest high voltage MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE
3 2 1
TO-247
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V DS V DGR VGS
ID ID IDM () Ptot
Drain-source Voltage (VGS = 0)
Drain- gate Voltage (RGS = 20 kΩ) Gate-source Voltage Drain Current (continuous) at Tc = 25 oC Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) Total Dissipation at Tc = 25 oC Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
Value 900 900 ± 30 9.7 6 38 190 1.52 4
-65 to 150 150
(1) I SD ≤ 9.7A, di/dt ≤ 200A/µs...
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