Document
SD211DE/SST211 Series
N-Channel Lateral DMOS FETs
Product Summary
Part Number
SD211DE SD213DE SD215DE SST211 SST213 SST215
V(BR)DS Min (V) 30 10 20 30 10 20
VGS(th) Max (V) 1.5 1.5 1.5 1.5 1.5 1.5
SD211DE SD213DE SD215DE
SST211 SST213 SST215
rDS(on) Max (W)
45 @ VGS = 10 V 45 @ VGS = 10 V 45 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V 50 @ VGS = 10 V
Crss Max (pF) 0.5 0.5 0.5 0.5 0.5 0.5
tON Max (ns) 2 2 2 2 2 2
Features
D Ultra-High Speed Switching—tON: 1 ns D Ultra-Low Reverse Capacitance: 0.2 pF D Low Guaranteed rDS @ 5 V D Low Turn-On Threshold Voltage D N-Channel Enhancement Mode
Benefits
D High Speed System Performance D Low Insertion Loss at High Frequencies D Low Transfer Signal Loss D Simple Driver Requirement D Single Supply Operation
Applications
D Fast Analog Switch D Fast Sample-and-Holds D Pixel-Rate Switching D DAC Deglitchers D High-Speed Driver
Description
The SD211DE/SST211 series consists of enhancementmode MOSFETs designed for high speed low-glitch switching in audio, video, and high-frequency applications. The SD211 may be used for "5-V analog switching or as a high speed driver of the SD214. The SD214 is normally used for "10-V analog switching. These MOSFETs utilize lateral construction to achieve low capacitance and ultra-fast switching speeds. An
integrated Zener diode provides ESD protection. These devices feature a poly-silicon gate for manufacturing reliability.
For similar products see: quad array—SD5000/5400 series and non-Zener protection—SD210DE/214DE.
TO-206AF (TO-72)
S 1
Body Substrate 4 (Case)
TOĆ253 (SOTĆ143)
Body Substrate 1
4G
2 D
3 G
Top View SD211DE, SD213DE, SD215DE
S2
3D
Top View SST211 (D1)*, SST213 (D3)*, SST215 (D5)*
*Marking Code for TOĆ253
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70295. Applications information may also be obtained via FaxBack, request document #70607.
Siliconix S-51850—Rev. F, 14-Apr-97
1
SD211DE/SST211 Series
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
GateĆDrain, GateĆSource Voltage (SD211DE/SST211) -30/25 V (SD213DE/SST213) -15/25 V (SD215DE/SST215) -25/30 V
GateĆSubstrate Voltagea (SD211DE/SST211) . . . . . . . . -0.3/25 V (SD213DE/SST213) . . . . . . . -0.3/25 V (SD215DE/SST215) . . . . . . . -0.3/30 V
DrainĆSource Voltage
(SD211DE/SST211) . . . . . . . . . . . . 30 V (SD213DE/SST213) . . . . . . . . . . . 10 V (SD215DE/SST215) . . . . . . . . . . . 20 V
SourceĆDrain Voltage
(SD211DE/SST211) . . . . . . . . . . . . 10 V (SD213DE/SST213) . . . . . . . . . . . 10 V (SD215DE/SST215) . . . . . . . . . . . 20 V
DrainĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 30 V (SD213DE/SST213) . . . . . . . . . . . 15 V (SD215DE/SST215) . . . . . . . . . . . 25 V
SourceĆSubstrate Voltage (SD211DE/SST211) . . . . . . . . . . . . 15 V (SD213DE/SST213) . . . . . . . . . . . 15 V (SD215DE/SST215) . . . . . . . . . . . 25 V
Drain Curren.