FQN1N60C

FQN1N60C — N-Channel QFET® MOSFET FQN1N60C N-Channel QFET® MOSFET 600 V, 0.30 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. December 2013 Features 0.30 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.15 A Low Gate Charge (Typ. 4.8 nC) Low Crss (Typ. 3.5 pF) 100% Avalanche Tested D GDS TO-92 G S Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol Parameter VDSS ID IDM VGSS EAS IAR EAR dv/dt Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt PD Power Dissipation (TA = 25°C) Power Dissipation (TL = 25°C) - Derate above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8" from Case for 5 Seconds. Thermal Characteristics (Note 1) (Note 2) (Note 1) (Note 1) (Note 3) Symbol RθJL RθJA Parameter Thermal Resistance, Junction-to-Lead, Max. Thermal Resistance, Junction-to-Ambient, Max. (Note 5a) (Note...