LT1N60

Xi′an Longtium Microelectronics Technology Developing Co., Ltd. Features  High ruggedness  RDS(ON) (Max 9 Ω)@VGS=10V  Gate Charge (Max 6nC)  Improved dv/dt Capability  100% Avalanche Tested General Description  This power MOSFET is produced with advanced VDMOS technology of LONGTIUMIC.  This technology enable power MOSFET to have better characteristics,  Such as fast switching time, low on resistance, low gate charge and especially excellent avalanche characteristics.  This power MOSFET is usually used at AC adaptors and SMPS . LT1N60 N-channel MOSFET N-channel MOSFET 2 Order Codes Item Sales Type 1 LT C 1N60C 2 LT I 1N60C 3 LT D 1N60C Marking LT1N60C LT1N60C LT1N60C Package TO-92 TO-251 TO-252 Packaging TAPE TUBE REEL （2011-AUG Version1.0）www.longtiumic.com 1/7 LT1N60 Absolute maximum ratings Symbol Parameter VDSS ID IDM VGS EAS EAR dv/dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current (@TC=25oC) Continuous Drain Current (@TC=100oC) Drain current pulsed (note 1) Gate to Source Voltage Single pulsed Avalanche Energy (note 2) Repetitive Avalanche Energy (note 1) Peak diode Recovery dv/dt (note 3) Total power dissipation (@TC=25oC) Derating Factor above 25oC Operating Junction Temperature & Storage Temperature Maximum Lead Temperature for soldering purpose, 1/8 from Case for 5 seconds. *. Drain current is limited by junction temperature. Thermal characteristics Symbol RthjC RthCS RthjA Parameter Thermal resistance, Junction t...