N-Channel MOSFET
1.3A, 600V, N
H
FQU1N60C FQD1N60C
H1N60U H1N60D
1N60
HAOHAI
U: TO-251 D: TO-252
1N60 Series
N-Channel MOS...
Description
1.3A, 600V, N
H
FQU1N60C FQD1N60C
H1N60U H1N60D
1N60
HAOHAI
U: TO-251 D: TO-252
1N60 Series
N-Channel MOSFET
80/ 2.5K/
4Kpcs/ 5Kpcs/
24Kpcs 25Kpcs
■APPLICATION ELECTRONIC BALLAST ELECTRONIC TRANSFORMER SWITCH MODE POWER SUPPLY
ID=1.3A VDS=600V RDS(on)=13Ω
■FEATURES LOW ON-RESISTANCE FAST SWITCHING HIGH INPUT RESISTANCE RoHS COMPLIANT Package: TO-251 and TO-252(IPAK & DPAK)
■ 、、、RoHS
■ 、LCD、LED、、UPS 、、、、 、、 、
■ TO-251(IPAK)、TO-252(DPAK)
1N60 Series Pin Assignment
3-Lead Plastic TO-251 Package Code: U Pin 1: Gate Pin 2: Drain Pin 3: Source
3-Lead Plastic TO-252 Package Code: D Pin 1: Gate Pin 2: Drain Pin 3: Source
2D
Series Symbol: 1 G
3S
■ Absolute Maximum Ratings(TC=25℃)
PARAMETER
- Drain-source Voltage
- gate-source Voltage
Continuous Drain Current8
TC=25℃ TC=100℃
Drain Current -Pulsed ①
Power Dissipation (TL=25°C) Junction Temperature
Storage Temperature
Single Pulse Avalanche Energy ②
* (*Drain current limited by maximum junction temperature)
SYMBOL
VDS VGS
ID
IDM PD Tj TSTG EAS
VALUE
600 ±30 1.0 * 0.6 * 4.0 * 28 150 -55~+150 14
UNIT
V
A
W ℃ mJ
http://www.szhhe.com HAOHAI ELECTRONICS CO., LTD.
1 6
kkg@kkg.com.cn 1N60C-UD-E2C
1.3A, 600V, N
■ Electronic Characteristics(TC=25℃)
PARAMETER
SYMBOL
- Drain-source Breakdown Voltage
BVDSS
Breakdown Voltage Temperature Coefficient
ΔBVDSS/ΔTj
Gate Threshold Voltage
VGS(TH)
- Drain-source Leakage Current
IDSS
Fo...
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