6R600P

CoolMOSTM Power Transistor Features Lowest figure-of-merit RON x Qg Ultra low gate charge Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max @ Tj =25°C Q g,typ IPB60R600CP 650 V 0.6 Ω 21 nC PG-TO263 CoolMOS CP is designed for: Hard switching SMPS topologies Type IPB60R600CP Package PG-TO263 Marking 6R600P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t 2),3) AR Avalanche current, repetitive t 2),3) AR MOSFET dv /dt ruggedness Gate source voltage ID I D,pulse E AS E AR I AR dv /dt V GS T C=25 °C T C=100 °C T C=25 °C I D=2.2 A, V DD=50 V I D=2.2 A, V DD=50 V V DS=0...480 V static AC (f >1 Hz) Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg Rev.2.0 page 1 Value 6.1 3.8 15 144 0.2 2.2 50 ±20 ±30 60 -55 ... 150 Unit A mJ A V/ns V W °C 2008-02-15 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current2) Reverse diode dv /dt 4) Symbol Conditions IS I S,pulse T C=25 °C dv /dt IPB60R600CP Value 3.3 15 15 Unit A V/ns Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC - - 2.1 K/W Th...