C572

2SC752(G)TM TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC752(G)TM Ultra High Speed Switching Applications Computer, Counter Applications Unit: mm · High transition frequency: fT = 400 MHz (typ.) · Low saturation voltage: VCE (sat) = 0.3 V (max) · High speed switching time: tstg = 15 ns (typ.) Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 40 15 5 200 40 400 125 -55~125 Unit V V V mA mA mW °C °C Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO VCB = 40 V, IE = 0 IEBO VEB = 5 V, IC = 0 hFE (1) VCE = 1 V, IC = 10 mA (Note) hFE (2) VCE (sat) VBE (sat) fT Cob VCE = 1 V, IC = 100 mA IC = 20 mA, IB = 1 mA IC = 20 mA, IB = 1 mA VCE = 10 V, IC = 10 mA VCB = 10 V, IE = 0, f = 1 MHz Turn-on time ton JEDEC TO-92 JEITA SC-43 TOSHIBA 2-5F1B Weight: 0.21 g (typ.) Min Typ. Max Unit ¾ ¾ 0.1 mA ¾ ¾ 0.1 mA 40 ¾ 240 20 ¾ ¾ ¾ ¾ 0.3 V ¾ ¾ 1.0 V 200 400 ¾ MHz ¾4 6 pF ¾ 70 100 Switching time Storage time tstg ¾ 15 30 ns Fall time tf Duty cycle <= 2％ Note: hFE classification R: 40~80, O: 70~140, Y: 120~240 1 ¾...