WTI49

Winsem Technology Corp. High Voltage NPN Transistor WTBV49L / WTI49 POWER TRANSISTOR TO-92 Pin Definition 1. Emitter 2. Collector 3. Base Features High Voltage High Switch Speed BVCEO : 530V BVCBO : 900V IC : 1.5A VCE(SAT) : 0.5V@Ic / IB=0.5A / 0.1A Silicon Triple Diffused Type Application Electronic Ballasts Adapter Charger Lighting ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO92) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCEO VEBO IC ICP Ptot TJ TSTG Version A09 Max Rating 900 530 10 1.5 3 1.96 30 150 -55 ~ +150 Unit V V V A A W ℃ ℃ Page 1 Winsem Technology Corp. WTBV49L / WTI49 POWER TRANSISTOR ELECTRICAL CHARACTERISTICS ( Tc = 25℃ ) Parameter Symbol Test Condition Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current BVCBO BVCEO BVEBO ICBO IC = 1mA, IB=0 IC = 10mA, IE=0 IE = 1mA, IC=0 VCB = 800V, IE=0 Emitter Cutoff Current IEBO hFE1 VEB = 10V, IC=0 VCE = 5V, IC=1mA DC Current Gain hFE2 VCE = 5V, IC=400mA hFE3 VCE = 5V, IC=1A Collector-Emitter Saturation Voltage VCE(SAT1) IC/IB = 0.5A / 0.1A VCE(SAT2) IC/IB = 1.0A / 0.25A VCE(SAT3) IC/IB = 1.5A / 0.5A Base-Emitter Saturation Voltage VBE(SAT1) IC/IB = 0.5A / 0.1A VBE(SAT2) IC/IB = 1.0A / 0.25A Min Typ...