Winsem Technology Corp.
High Voltage NPN Transistor
WTBV49SL / WTI49S
POWER TRANSISTOR
TO-92
Pin Definition 1. Emitter...
Winsem Technology Corp.
High Voltage
NPN Transistor
WTBV49SL / WTI49S
POWER
TRANSISTOR
TO-92
Pin Definition 1. Emitter 2. Collector 3. Base
Features
High Voltage High Switch Speed BVCEO : 500V BVCBO : 850V IC : 1.5A VCE(SAT) : 0.5V@Ic / IB=0.5A / 0.1A Silicon Triple Diffused Type
Application
Electronic Ballasts Adapter Charger Lighting
ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ )
Parameter
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO92) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range
Symbol VCBO VCEO VEBO
IC ICP
Ptot
TJ TSTG
Version A10
Max Rating
850 500 10 1.5
3 1.96 30 150 -55 ~ +150
Unit V V V A A
W
℃ ℃
Page 1
Winsem Technology Corp.
WTBV49SL / WTI49S
POWER
TRANSISTOR
ELECTRICAL CHARACTERISTICS ( Tc = 25℃ )
Parameter
Symbol
Test Condition
Min Typ Max Unit
Collector-Base Voltage Collector-Emitter Breakdown Voltage Emitter- Base Breakdown Voltage Collector Cutoff Current
BVCBO BVCEO BVEBO
ICBO
IC = 1mA, IB=0 IC = 10mA, IE=0 IE = 1mA, IC=0 VCB = 800V, IE=0
850 ─ 500 ─
9─ ──
─V ─V ─V 10 ㎂
Emitter Cutoff Current
IEBO VEB = 10V, IC=0
──
hFE1 VCE = 10V, IC=10mA 15 ─
0.5 ㎂ 40
DC Current Gain
hFE2 VCE = 10V, IC=400mA 20
─
40
hFE3 VCE = 10V, IC=1A
6 ─ 40
Collector-Emitter Saturation Voltage
VCE(SAT1) IC/IB = 0.5A / 0.1A VCE(SAT2) IC/IB = 1.0A / 0.25A VCE(SAT3) IC/IB = 1.5A / 0.5A
─ 0.3...