WTBV116DL

Winsem Technology Corp. High Voltage NPN Transistor WTBV116DL / WTBV116DI POWER TRANSISTOR TO-92 Pin Definition 1. Emitter 2. Collector 3. Base Features High Voltage Very High Switch Speed BVCEO : 400V BVCBO : 800V IC : 1.5A Silicon Triple Diffused Type Application Electronic Ballasts Adapter Lighting ABSOLUTE MAXIMUM RATINGS ( Tc = 25℃ ) Parameter Collector-Base Voltage Collect-Break Down Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Total Power Dissipation(TO92) Total Power Dissipation(TO251) Junction Temperature Operating Junction and Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC ICP PD TJ TSTG Version A10 Max Rating 800 800 400 9 1.5 2 1.5 30 150 -55 ~ +150 Unit V V V V A A W ℃ ℃ Page 1 Winsem Technology Corp. WTBV116DL / WTBV116DI POWER TRANSISTOR ELECTRICAL CHARACTERISTICS ( Tc = 25℃ ) Parameter Symbol Test Condition Min Typ Max Unit Collector-Base Voltage Collector-Emitter Breakdown Voltage BVCBO BVCEO IC = 1mA, IB=0 IC = 1mA, IE=0 800 ─ 400 ─ ─ ─ V V Emitter- Base Breakdown Voltage BVEBO IE = 1mA, IC=0 9─ ─ V Collector Cutoff Current ICBO VCB = 700V, IE=0 ── 1㎂ Emitter Cutoff Current IEBO VEB = 9V, IC=0 ── 1㎂ hFE1 VCE = 10V, IC=10mA 20 ─ ─ DC Current Gain hFE2 VCE = 10V, IC=100mA 25 ─ 45 hFE3 VCE = 10V, IC=280mA 20 ─ ─ VCE(SAT1) IC/IB = 50mA / 10mA ─ ─ 0.5 Collector-Emitter Saturation Voltage VCE(SAT2) IC/IB = 100mA / 10mA ─ ─ 1 V VCE(S...